A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology

Abstract

This article reports on a gallium-nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a 3-dB gain bandwidth (BW) from 63 to 101 GHz. The MMIC is fabricated in the Fraunhofer IAF 70-nm GaN-on-silicon-carbide (SiC) high-electron-mobility transistor (HEMT) technology. The four-stage common-source LNA exhibits an average noise figure (NF) of 3 dB for a measured frequency range from 75 to 101 GHz. The MMIC reaches a minimum NF of 2.8 dB at an operating frequency of 83 GHz. A mapping of two 100-mm wafers shows an excellent homogeneity with an 86% yield and an average NF of 3-3.3 dB. At 100 GHz, the LNA obtains output-referred 1-dB compression and third-order intercept points of 12.1 and 14.4 dBm, respectively. Furthermore, comprehensive investigations of the bias dependence of all measured performance parameters provide an insight into the presented device and LNA. To the best of the authors' knowledge, this MMIC demonstrates the lowest NF among GaN LNAs at E/W-band frequencies.

$V$- and $W$-Band Millimeter-Wave GaN MMICs

“…Furthermore, a five-stage balanced LNA in the same process is presented in [54] with similar bandwidth and gain as in [53], but with greater linearity over input power and less overall power consumption. A four-stage LNA is published in [55] using a 70 nm gate process which reports low noise figure between 2.8 and 3.3 dB.…”

A self-biased GaN LNA with 30 dB gain and 21 dBm P1dB for 5G communications

“…Figure 1 shows its small signal equivalent circuit. The initial bias conditions of the device were chosen to achieve the maximum value of f T × g m /I DS , where f T , g m , and I DS are transition frequency, transconductance, and sourcedrain current, respectively [12][13][14][15]. However, the ultimate optimal bias voltages at the gate, V g , and the drain, V d , are −2 and 15 V, respectively.…”

GaN Integrated Circuit Power Amplifiers: Developments and Prospects

“…In the device level, a number of GaN HEMT structures capable of operating under higher supply voltages or in higher frequency bands, e.g., T-gate structure, have been presented [1], [2], [3], [4]. Moreover, scaling of the minimum gate length of transistors down to sub-100 nm has enabled the operation of GaN circuits in mm-wave bands [67], [68], [70], [89]. An important challenge in the transistor level has been the development of accurate models for GaN HEMTs which include nonlinearities, high-frequency parasitic components, the charge trapping and memory effects, and the thermal heating impact on performance and reliability [24].…”

“…Finally, in the circuit level, major developments can be classified to low-loss power combining techniques, harmonic termination networks, integration of bandpass filter (BPF) into the PA circuit, linearization techniques for AM-AM and AM-PM distortions, and broadband uniform and nonuniform distributed PAs. The overall result of these progresses is the development of fully integrated GaN RF PAs with multi-hundred-watt output power, e.g., products by Qorvo [30] and Wolfspeed [31], highly scaled GaN processes, e.g., 40-nm GaN-on-SiC double-heterostructure field-effect transistor (DHFET) [67], [68], 40-nm and 70-nm GaN-on-SiC HEMTs [20], [89], and high-power mm-wave GaN PAs providing 34.8 dBm (3 W) at 84 GHz [83], 37.8 dBm (6 W) at 95 GHz [65], 26 dBm at 120 GHz [70], 15.8 dBm at 180 GHz [70], and 18.5 dBm at 205 GHz [71].…”

“…Although the main application of GaN technology is power amplifications, the high power handling capabilities, inherent high linearity, and low noise of the GaN HEMT devices have motivated other applications. GaN low-noise amplifiers (LNAs) can tolerate extremely high input power levels and can provide excellent linearity [88], [89]. Other circuits implemented using GaN technology are control components including switches [92], [93], limiters [94], phase shifters [95], nonreciprocal circulator for full-duplex operation [90], and DC-DC converters [91].…”