W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/

Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001)

“…In particular, III-V compound semiconductors have strong potential for meeting with the performance using metamorphic growth; InP devices, such as lattice-matched high electron mobility transistors (HEMTs) [2] and heterojunction bipolar transistors (HBTs) [3], have shown excellent microwave performance. In(Ga,Al)As metamorphic devices on GaAs, such as metamorphic HEMTs [4][5][6][7] and metamorphic HBTs [8,9] using lattice-mismatched growth, have been extensively developed for performance balance with the InP devices, and consequently they have exhibited performance equivalent to the InP devices [10].…”

Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors

“…Results already published in the literature include power amplification up to 600 GHz [1] as well as the lowest noise figure ever reported at room temperature [2].…”

Performance trends of Si-based RF transistors

“…-f T 562 GHz [3] and f max 600 GHz [4] for InP HEMTs, -f T 550 GHz [5] and f max 687 GHz [6] for InP HBTs, -f T 380 GHz [7] and f max 350 GHz [8] for SiGe HBTs, -f T 330 GHz [9] and f max 320 GHz [9] for Si MOSFETs.…”