Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors

Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure usingC-Vprofiling

“…The static 2D electron distribution is determined from the Schr6dinger's equation. The Hamiltonian H in the effective-mass approximation for the conduction band can be written as [2]:…”

“…However, with the exception of the Ref. [2], the calculations of band offsets from C-V experimental data were made without the strain effect. At the same time, the strain is sufficient large and produces the important changes in interband optical transitions [6].…”

“…Capacitance-voltage (C-V ) profiling is one of the methods for the investigation and design of heterostructure quantumwell (QW) electronic and optoelectronic devices [1][2][3][4][5][6]. This technique is used for determining band offsets at the heterointerface.…”

“…The strains lead to shifts of the conduction and valence bands in the well for structures grown in the [100] direction [7]. However, with the exception of [2] and [3], the calculations of band offsets from C-V experimental data were made without the strain effect. At the same time, the strain is sufficiently large and produces important changes in interband optical transitions [7].…”