VRBS: A virtual RBS simulation tool for ion beam analysis

Stoquert, J.P.; Pêcheux, F.; Hervé, Y.; Marchal, H.; Stuck, R.; Siffert, P.

doi:10.1016/s0168-583x(97)00807-0

Cited by 10 publications

(3 citation statements)

References 1 publication

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“…11(a). Using a computer code developed by Hervé et al, 104 the random spectrum was successfully simulated with 3 × 10 13 4 He particles, providing confidence in the measured 4 He flux during the C-RBS analysis. Moreover, the intensity of the Pd peak remained constant for the different samples [ Fig.…”

Section: B Damage Analysis From C-rbs Experimentsmentioning

confidence: 99%

Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF2crystal: Evidence for two thresholds of damage creation

et al. 2012

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CaF 2 crystals as representatives of the class of ionic nonamorphizable insulators were irradiated with many different swift heavy ions of energy above 0.5 MeV/u providing a broad range of electronic energy losses (S e ). Beam-induced modifications were characterized by Channeling Rutherford Backscattering Spectrometry (C-RBS) and x-ray diffraction (XRD), complemented by transmission electron microscopy (TEM). Results from C-RBS give evidence of significant damage appearing above a S e threshold of 5 ± 2 keV/nm. A second critical S e appears around 18 ± 3 keV/nm; below this value the damage as function of ion fluence saturates at 20%, while above this the damage saturation level increases with S e , reaching ∼60% for ions of S e = 30 keV/nm. XRD measurements also show effects indicating two threshold values. Above 5 keV/nm, the widths of the XRD reflection peaks increase due to the formation of nanograins, as seen by TEM, while a significant decrease of the peak areas only occurs above 18 keV/nm. The track radii deduced from C-RBS measurements are in agreement with those extracted from the fluence evolution of the widths of the XRD peaks. Moreover, track radii deduced from the peak area analysis are slightly smaller but in agreement with previous track observations by high resolution electron microscopy. Calculations based on the inelastic thermal spike model suggest that the lower threshold at 5 keV/nm is linked to the quenching of the molten phase, whereas the threshold at 18 keV/nm can be interpreted as quenching of the boiling phase. The results of CaF 2 are compared with other nonamorphizable materials such as LiF and UO 2 .

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Section: B Damage Analysis From C-rbs Experimentsmentioning

confidence: 99%

Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF2crystal: Evidence for two thresholds of damage creation

et al. 2012

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“…To determine the concentrations of 13 [20]. The spectra were calibrated by using bare SiO 2 and SiC samples for oxygen and carbon nuclear reactions, respectively, and were further analyzed with the home-made SAM software (Systeme d'Analyse des Materiaux) [22]. Samples were imaged by a Scanning Electron Microscope (SEM), a Phillips XL-30S operating at 3 kV.…”

Section: Methodsmentioning

confidence: 99%

Mechanism of Thin Layers Graphite Formation by 13C Implantation and Annealing

et al. 2014

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Abstract:The mechanism of thin layers graphite (TLG) synthesis on a polycrystalline nickel film deposited on SiO 2 (300 nm thick)/Si(100) has been investigated by 13 C implantation of four equivalent graphene monolayers and annealing at moderate temperatures (450-600 °C). During this process, the implanted 13 C segregates to the surface. NuclearReaction Analyses (NRA) are used for the first time in the topic of graphene synthesis to separate the isotopes and to determine the 12 C and 13 C concentrations at each step. Indeed, a significant part of carbon in the TLG also comes from residual 12 C carbon absorbed into the metallic matrix. Raman spectroscopy and imaging are used to determine the main location of each carbon isotope in the TLG. The Raman mappings especially emphasize the role of 12 C previously present at the surface that first diffuses along grain boundaries. They play the role of nucleation precursors. Around them the implanted 13 C or a mixture of bulk 12 C-13 C aggregate and further precipitate into graphene-like fragments. Graphenization is effective at around 600 °C. These results point out the importance of controlling carbon incorporation, as well as the importance of preparing a uniform nickel surface, in order to avoid heterogeneous nucleation.

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“…An absorber of 11.8 μm Mylar foil was attached above the detector to stop the alpha particles generated by the 16 O(d, α) 14 N reaction and the backscattered deuterons particles. The experimental spectra were calibrated by using bare SiO 2 and SiC samples for oxygen and carbon nuclear reactions, respectively, and the spectra were then simulated with the SIMNRA software [30]. Due to the weak depth resolution of the NRA, it is not possible to differentiate surface or interface carbon from bulk carbon.…”

Section: Characterizations Of the Samplesmentioning

confidence: 99%

Graphene Thin Layers Formation on Monocrystalline Ni(111)/MgO(111) by Carbon Implantation and Annealing

Normand

Benyahia²,

Speisser³

et al. 2015

Graphene

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The objectives of this study are the elaboration of graphene by 1) carbon implantation at moderate temperature (873 K) into a monodomain epitaxially-grown Ni(111) film deposited on a reusable MgO(111) substrate, followed by 2) carbon surface precipitation by thermal treatment. The growth of the nickel film by molecular beam epitaxy has been monitored by Reflection High Energy Electron Diffraction. The film morphology has been studied by Electron Back-Scattered Diffraction, Atomic Force Microscopy and Rutherford Backscattering Spectroscopy in the tunneling mode. In the optimized conditions corresponding to a germination step at 633 K followed by a step growth at 873 K and a post-annealing treatment at 1023 K monocrystalline Ni(111)     110 //MgO(111)     110 films are prepared, exhibiting monodomain swith high structural and orientation qualities. 13 C implantation into these nickel films is subsequently achieved at 873 K with energy within 20 -50 keV and a carbon dose equivalent to 4 monolayers of graphene (1.4 × 10 16 at/cm 2 ). Carbon diffuses mainly towards the surface, forming thin layers graphene. Compared to a Ni polycrystalline film the graphene fragments are larger and better facetted. The carbon amounts inside the nickel films at different steps, as well as the carbon amount at the surface, have been measured by Nuclear Reaction Analysis and X-ray Photoelectron Spectroscopy, respectively. The results show that, in addition to implanted 13 C, some amounts of 12 C is incorporated at different steps of the process and is involved in the formation of the graphene mono-* Corresponding author. F. Le Normand et al. 22layers, as shown by 13 C/ 12 C Raman mappings. We finally discuss different mechanisms for carbon diffusion and surface segregation, considering the size and thickness distributions of the thinlayers graphene.

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VRBS: A virtual RBS simulation tool for ion beam analysis

Cited by 10 publications

References 1 publication

Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF2crystal: Evidence for two thresholds of damage creation

Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF2crystal: Evidence for two thresholds of damage creation

Mechanism of Thin Layers Graphite Formation by 13C Implantation and Annealing

Graphene Thin Layers Formation on Monocrystalline Ni(111)/MgO(111) by Carbon Implantation and Annealing

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