Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

Vasundhara, М.; Routoure, Jean‐Marc; Guillet, Bruno; Méchin, Laurence; Grandal, J.; Martin-Horcajo, Sara; Brazzini, Tommaso; Calle, F.; Sánchez-García, M.Á.; Marie, Philippe; Ruterana, P.

doi:10.1063/1.3601855

Cited by 9 publications

(8 citation statements)

References 20 publications

(11 reference statements)

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“…Low frequency noise (LFN) measurements can be used to investigate the material/device quality, to identify material defects and trapping effects, and to investigate the reliability of GaN based HEMTs [14]- [18]. In addition to significant reduction of the gate leakage current and the increase of the sheet charge density, the in situ SiN passivation layer can also potentially improve the low frequency device noise performance [19]- [23].…”

Section: Introductionmentioning

confidence: 99%

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Rzin

Guillet

Méchin

et al. 2019

IEEE Trans. Electron Devices

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This paper reports on sub-10 nm quaternary barrier InAlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Metal-Organic-Vapor-Phase-Epitaxy (MOVPE) with an in situ SiN passivation layer, and ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14 and 22 nm are studied. Low Frequency Noise (LFN) measurements of the drain current have been carried out in the linear regime and showed that the in situ SiN thickness has no impact on the noise performance. S ID /I D 2 in the linear regime dependence over the gate overdrive shows that the channel noise is located under the gate and that the noise is not impacted by the thickness of the in situ SiN layer.

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Section: Introductionmentioning

confidence: 99%

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Rzin

Guillet

Méchin

et al. 2019

IEEE Trans. Electron Devices

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“…Low-frequency noise (LFN) measurements are an effective tool to investigate the material/device quality and allows to study material defects [16], trapping effects and also to investigate the reliability of GaN-based HEMTs, especially when performed at various temperatures [17], [18].…”

mentioning

confidence: 99%

Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of <italic>In Situ</italic> SiN Passivated InAlGaN/GaN MIS-HEMTs

Rzin

Routoure

Guillet

et al. 2017

IEEE Trans. Electron Devices

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In this paper we investigated the gate-drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metalinsulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-drain spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for L GD < 10 μm. Finally, the calculated Hooge parameter (α H) is equal to 3.1 × 10 −4. It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications. Index Terms-Channel resistance, gate-drain spacing, in situ sin passivation, InAlGaN/GaN, low-frequency noise (LFN), metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). I. INTRODUCTION G AN-based high electron mobility transistors (HEMTs) have demonstrated their potential for telecommunication and power applications owing to the high electrical breakdown field (3.3 MV/cm) and the high electron mobility (2 ×10 3 cm 2 • V −1 • s −1) of GaN material [1]. Extensive research and technology development enabled GaN-based HEMTs to significantly improve over the last two decades.

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“…It has to be noted that the noise levels obtained here are among the lowest one reported ever on InN. 206 Taking sample dimensions W = 305µm, L = 100µm and t = 400 nm, and assuming a constant charge carrier concentration of 10 18 cm −3 from litera-ture, 209 we obtained α H about 10 −3 . This value can be compared with other narrow band gap semiconductors, such as InAs for which it is about 10 −3 at room temperature.…”

Section: Surface Morphologymentioning

confidence: 58%

“…7 For all the studied samples, the results are in agreement with literature. 206 The low-frequency voltage-noise analysis was performed at 300 K with a homemade low noise electronics read out associated with a HP 3562A dynamic signal ana- The noise voltage spectral density S V at 1 Hz has a quadratic dependence with the bias current(I bi as ) and expressed as…”

Section: Surface Morphologymentioning

confidence: 99%

“…where α H is the Hooge parameter (dimensionless), n the charge carrier density (in In a previous work 206 it has already been pointed out that at temperature higher than 100 K, InN act as a degenerate semiconductor, showing metallic behaviour. In this sense, the overall noise is composed by both white-noise contributions and low frequency noise dependence of the type 1/ f a , with a = 1.…”

Section: Surface Morphologymentioning

confidence: 99%

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Properties and applications of high electron density structures based on InN and related compounds

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Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

Cited by 9 publications

References 20 publications

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of <italic>In Situ</italic> SiN Passivated InAlGaN/GaN MIS-HEMTs

Properties and applications of high electron density structures based on InN and related compounds

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