2020
DOI: 10.1126/sciadv.abb7721
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Voltage-induced ferromagnetism in a diamagnet

Abstract: Increasingly impressive demonstrations of voltage-controlled magnetism have been achieved recently, highlighting potential for low-power data processing and storage. Magnetoionic approaches appear particularly promising, electrolytes and ionic conductors being capable of on/off control of ferromagnetism and tuning of magnetic anisotropy. A clear limitation, however, is that these devices either electrically tune a known ferromagnet or electrically induce ferromagnetism from another magnetic state, e.g., antife… Show more

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Cited by 43 publications
(30 citation statements)
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“…However, it is unclear whether the magnetic ground state in F5GT is also sensitive to the in-situ charge doping. Previous experiments demonstrate that magnetism in vdW materials can be controlled by a gate voltage (37)(38)(39)(40), which sheds lights on their applications in vdW spintronics and memory devices. For vdW itinerant magnet, however, conventional electricfield gating is stumbling in the electrical control of the FM, since the electric field tends to be screened within few nano-meters.…”
Section: Resultsmentioning
confidence: 96%
“…However, it is unclear whether the magnetic ground state in F5GT is also sensitive to the in-situ charge doping. Previous experiments demonstrate that magnetism in vdW materials can be controlled by a gate voltage (37)(38)(39)(40), which sheds lights on their applications in vdW spintronics and memory devices. For vdW itinerant magnet, however, conventional electricfield gating is stumbling in the electrical control of the FM, since the electric field tends to be screened within few nano-meters.…”
Section: Resultsmentioning
confidence: 96%
“…Ferromagnetism has been induced in LaMnO 3 and SrCoO, which are antiferromagnetic. Recently, ferromagnetism was induced in diamagnetic Fe pyrite ("fool's gold") via the application of voltage [118]. Overall, although ferromagnetic materials have been significantly developed, commercialization of these materials is considerably more time-consuming than their development.…”
Section: Discussionmentioning
confidence: 99%
“…Itinerant ferromagnetism in two-dimensional (2D) and three-dimensional (3D) electron gas has been observed in various materials, such as manganese perovskites [1][2][3][4], transition-metal-doped semiconductors [5][6][7], monolayers of transition metal dichalcogenides [8][9][10][11][12], and many others [13][14][15][16][17][18][19][20]. The physical mechanisms leading to the ferromagnetic ground state depend strongly on the materials.…”
Section: Introductionmentioning
confidence: 99%