Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

Laurent, T.; Sharma, Rajesh; Torres, J.; Nouvel, P.; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, Magdalena; Chenot, Sébastien; Faurie, J. P.; Beaumont, B.; Shiktorov, P.; Starikov, E.; Gruz̆inskis, V.; Korotyeyev, V. V.; Kochelap, V. A.

doi:10.1063/1.3627183

Cited by 16 publications

(14 citation statements)

References 14 publications

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“…Resonant detection and amplification of THz radiations have recently been studied for the multi-gated field-effect transistors [5][6][7][8]. Moreover, similar multi-contact devices can be utilized as modulators and polarizers for the THz radiation [9,10]. In experiments with transmission of the THz radiation one typically uses structures with a metallic grating of a sub-wavelength period ( a ) and submicron distance ( D ) between the grating and a 2D electron gas.…”

Section: Introductionmentioning

confidence: 99%

Interaction of terahertz electromagnetic field with a metallic grating: Near-field zone

Lyaschuk¹,

Korotyeyev²

2012

Ukr. J. Phys. Opt.

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Abstract. We have developed a theory for the interaction of THz radiation with a sub-wavelength metallic grating. The structure of electric field of the electromagnetic waves under the metallic grating has been studied for the near-field zone. Spatial distributions of the electric field components and the electric energy density have been obtained for the wave transmitted through the grating. An effect of strong local enhancement of the electric field has been detected. Spatial dependence of polarisation of the transmitted wave has been analysed for the near-field zone.

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Section: Introductionmentioning

confidence: 99%

Interaction of terahertz electromagnetic field with a metallic grating: Near-field zone

Lyaschuk¹,

Korotyeyev²

2012

Ukr. J. Phys. Opt.

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“…The spectra of these quantities are shown in Figs 3b and 3c. It should be noted at once that the spectra of both  and   calculated using the exact formulas (10) and (11) (solid lines) are close to the results obtained in the limit of thin film according to the formulas (12) and (13) To finalize the discussion of CR, it should be mentioned the possibility to determine the relaxation time by using the measurements of the polarization characteristics inherent to the transmitted wave. If the electron response obeys the Drude-Lorentz model (Eqs.…”

Section: Resultsmentioning

confidence: 99%

“…For the GaN bulk-like samples [8,9] and nitride quantum heterostructures [10,11], OPTTR was predicted in the range of the applied dc electric fields of 1-10 kV/cm and a wide frequency range of about 0.3-2 THz. In spite of significant theoretical progress in description of OPTTR resonance, the experimental efforts aimed at measuring the transmission spectra [12] have not yet provided reliable evidences of OPTTR. However, the specific behavior of the polarization characteristics of transmitted wave can clearly indicate the existence of OPTTR.…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

Korotyeyev¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The theory of THz radiation transmission through the film of compensated GaN of cubic modification under action of electric and magnetic fields has been developed. In the THz frequency range, spectra of the dynamic mobility tensor have been obtained for applied steady-state electric fields of several kV/cm and magnetic fields of several T. The spectra of transmission, reflection and loss coefficients have been analyzed for the Voigt configuration used for the applied fields. It has been shown that the transmitted wave becomes elliptically polarized, and the spectra of polarization characteristics such as ellipticity and rotation angle of the large axis of polarization ellipse were investigated under conditions of cyclotron resonance and optical phonon transit-time one. It has been found that, in certain frequency bands, polarization characteristics have the features valid for both resonances. The new optical method based on the analysis of ellipticity and rotation angle spectra is offered for determination of the low-field mobility.

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“…Rapid advances in group-III nitrides heterostructures, especially growth with excellent transport properties and a sufficiently high electron concentration (which provides strong interaction with EM radiation in the terahertz range), have been promising for high-power and high-frequency applications. In addition, the transport properties of two-dimensional electron gas (2DEG) in a III-nitride structure such as a GaN quantum well can be modified by applying a modest voltage, which results in the control of the transmission of the radiation [20]. This phenomenon is quite interesting for electro-optic modulators and tunable filters in the terahertz frequency range.…”

Section: Introductionmentioning

confidence: 98%

GaN-based metamaterial terahertz bandpass filter design: tunability and ultra-broad passband attainment

2015

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Engineering metamaterial-based devices such as terahertz bandpass filters (BPFs) play a definitive role in advancement of terahertz technology. In this article, we propose a design procedure to obtain a considerably broadband terahertz BPF at a normal incidence; it shows promising filtering characteristics, including a wide passband of ∼1.34 THz at a central frequency of 1.17 THz, a flat top in a broad band, and high transmission, compared to previous reports. Then, exploiting the voltage-dependent carrier density control in an AlGaN/GaN heterostructure with a Schottky gate configuration, we investigate the tuning of the transmission properties in a narrow-band terahertz filter. A combination of the ultra-wide, flat-top BPF in series with the tunable, narrow band filter designed in the current study offers the ability to tune the desired resonance frequency along with high out-of-band rejection and the suppression of unwanted resonances in a large spectral range. The proposed structure exhibits a frequency tunability of 103 GHz for a voltage change between -8 and 2 V, and a transmission amplitude change of ∼0.51. This scheme may open up a route for the improved design of terahertz filters and modulators.

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Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

Abstract: Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1−xN nanogroove

Cited by 16 publications

References 14 publications

Interaction of terahertz electromagnetic field with a metallic grating: Near-field zone

Interaction of terahertz electromagnetic field with a metallic grating: Near-field zone

Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

GaN-based metamaterial terahertz bandpass filter design: tunability and ultra-broad passband attainment

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