Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

Korotyeyev, V. V.

doi:10.15407/spqeo16.01.018

Cited by 5 publications

(3 citation statements)

References 19 publications

(20 reference statements)

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“…The streaming regime and OPTTR can be identified in the optical experiments by the methods of THz-Fourier-or time-domain spectroscopies. The peculiarities of the THz transmission/absorption spectra for the GaN sample under conditions of OPTTR were analyzed in [21].…”

Section: Introductionmentioning

confidence: 99%

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2018

Semicond. Phys. Quantum Electron. Optoelectron

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We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The study was carried out for compensated bulklike GaN samples for various lattice temperatures (30…300 K) and impurity concentrations (10 16 …10 17 cm -3 ). We found that at low lattice temperatures and low impurity concentrations, electric-field dependences of the transversal-to-current components of the diffusion tensor are non-monotonic for both configurations, while diffusion processes are mainly controlled by the magnetic field. With increasing the lattice temperature or impurity concentration, behaviour of the diffusion tensor becomes more monotonous and less affected by the magnetic field. We showed that this behaviour of the diffusion processes is caused by the distinct kinetics of hot electrons in polar semiconductors with strong electron -optical phonon coupling. We have suggested that measurements of the diffusion coefficient of electrons subjected to electric and magnetic fields facilitate identification of features of different electron transport regimes and development of more efficient devices and practical applications.

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Section: Introductionmentioning

confidence: 99%

Untitled

2018

Semicond. Phys. Quantum Electron. Optoelectron

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Section: Introductionmentioning

confidence: 99%

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields

Syngayivska¹

2018

Semicond. Phys. Quantum Electron. Optoelectron

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We studied the diffusion coefficient of hot electrons of GaN crystals in moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, are analysed. The study was carried out for compensated bulk-like GaN samples at different lattice temperatures (30…300 K) and impurity concentrations (10 16 …10 17 cm -3 ). We found that at low lattice temperatures and low impurity concentrations, electric-field dependencies of the transverse-to-current components of the diffusion tensor are non-monotonic for both configurations, while the diffusion processes are greatly controlled by the magnetic field. With an increase of the lattice temperature or the impurity concentration, the behaviour of the diffusion tensor becomes more monotonous and less affected by the magnetic field. We showed that such behaviour of the diffusion processes is due to the distinct kinetics of the hot electrons in polar semiconductors with strong electron-optical phonon coupling. We suggest that measurements of the diffusion coefficient of the electrons subjected to electric and magnetic fields facilitate the identification of features of different electron transport regimes and the development of more efficient devices and practical applications.

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“…We specified intervals of applied electric fields E (3…10 kV/cm), ambient temperatures T (30…150 K) and frequency ranges (0.2…2 THz), where streaming and OPTTR effects can occur [13,14]. Also, we investigated high-frequency properties of the compensated GaN under streaming conditions in the case of applied parallel magnetic field ( E H || ) [15,16] and found that this field has no effect on steady-state characteristics but essentially changes the frequency spectra of dynamic mobility tensor.…”

Section: Introductionmentioning

confidence: 99%

Elecron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN

Syngayivska¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. High-field electron transport has been studied in crossed electric and magnetic fields in bulk GaN with doping of 10 16 cm -3 and compensation around 90% at the low lattice temperature (30 K). The electron distribution function, the field dependences of the ohmic and Hall components of the drift velocity have been calculated using the Monte Carlo method in the wide range of applied electric (3…15 kV/cm) and magnetic (1…10 T) fields. Two external electrical circuits with short-and open-circuited Hall contacts have been analyzed. For a sample with short-circuited Hall contacts, there are the ranges of magnetic and electric fields where the non-equilibrium electron distribution function has a complicated topological structure in the momentum space with a tendency to formation of the inversion population. For these samples, field dependences of the ohmic and Hall components of the drift velocity have specific character. The ohmic component has the inflection point that corresponds to the maximum point of the Hall component. For the sample with open-circuited Hall contacts, field dependences of the drift velocity demonstrate a sub-linear growth without any critical points. It has been shown that there are ranges of the applied electric and magnetic fields for which the drift velocity exceeds zero magnetic field values.

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Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

Cited by 5 publications

References 19 publications

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Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields

Elecron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN

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