Voltage-controlled magnetic anisotropy in heterostructures with a two-dimensional magnetic material

Strain-Controlled Magnetocrystalline Anisotropy in Atomically Thin Ir-Stacked 1T-CrTe2

“…The distinct adsorption environments of Ir atoms give rise to the different local spin moments. However, we notice that the largest local moment of Ir atoms (∼ −0.139 μ B ) is much smaller than those in contact with the FeCo thin film or 2D Fe 2 I 2 . , This behavior can be explained by the absence of the strain-induced contributions as the compressive strain (>2%) cannot cause residual magnetism of the Ir monolayer …”

“…It is a key property of 2D ferromagnets, which determines the magnetization orientation, switching dynamics, and thermal stability of magnetic media. − In view of the attributes of mechanical flexibility and sensitivity to external stimuli, 2D FM layers constitute feasible alternatives to substitute traditional magnetic thin films in assembling MTJ architectures. In addition, the chemically saturated surfaces of 2D crystals can further improve the quality of stacking interfaces in MTJs . We notice that the possibility of mechanically exfoliating bulk 1T-CrTe 2 to produce 2D monolayers has been demonstrated experimentally. − Previous reports have observed that 1T-CrTe 2 possesses a high Curie temperature ( T C ) with a decreased thickness, and it is encapsulation-free and operable in aironotonic conditions with good stability .…”

“…However, we notice that the largest local moment of Ir atoms (∼ −0.139 μ B ) is much smaller than those in contact with the FeCo thin film or 2D Fe 2 I 2 . 21,35 This behavior can be explained by the absence of the strain-induced contributions as the compressive strain (>2%) cannot cause residual magnetism of the Ir monolayer. 34 Having substantiated the emergence of magnetism in the atomically thin Ir layer, we further evaluate its influence on the MCA of the H-CrTe 2 /Ir-capped structure.…”

“…In addition, the chemically saturated surfaces of 2D crystals can further improve the quality of stacking interfaces in MTJs. 21 We notice that the possibility of mechanically exfoliating bulk 1T-CrTe 2 to produce 2D monolayers has been demonstrated experimentally. 22−28 Previous reports have observed that 1T-CrTe 2 possesses a high Curie temperature (T C ) with a decreased thickness, and it is encapsulation-free and operable in aironotonic conditions with good stability.…”

Non-volatile control of topological phase transition in an asymmetric ferroelectric In2Te2S monolayer

“…The abundance of multifunctional materials lies in their wide range of functionalities that can be offered by the same material, thus enabling more fundamental scientific questions and device applications. [1][2][3][4][5][6][7][8][9] Among numerous possible strategies, the use of ferroelectrics to control topological phase transition, especially generation and annihilation, has drawn widespread attention and promoted rapid development. 1,2,4,8,[10][11][12][13][14][15][16] In ferroelectrics, polarization can serve as an external electric field, but it is superior to the electric field, due to its non-volatility and lower energy consumption.…”