Voltage and temperature dependencies of conductivity in gated graphene

Abstract

The resistivity of gated graphene is studied taking into account electron and hole scattering by short-and long-range structural imperfections (the characteristics of disorder were taken from the scanning tunneling microscopy data) and by acoustic phonons. The calculations are based on the quasiclassical kinetic equation with the normalization condition fixed by surface charge. The gatevoltage and temperature effects on the resistance peak, which is centered at the point of intrinsic conductivity, are found to be in agreement with the transport measurements.

Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection

“…The resistivity was shown to drastically reduce upon heating from 300-500 K [17] with the results obtained for single layer graphene in good agreement with theory [18]. The decrease in resistance at room temperature and above has been proposed to originate from the thermal generation of carriers whilst the shape of the resistance curve is determined by hole scattering on the long and short range disorder and acoustic phonons [18]. Differences in the reported single layer temperature dependant conductivity to that measured here on single layer epitaxial graphene on SiC may be due to changes in electronic band structure of the graphene arising from the differing substrates.…”

“…In some reports the initial resistance decrease is sub linear and in some cases super linear, reversals of the trend are also observed at differing temperatures with the difference probably due to varying defect concentrations arising from the differing production methods Resistivity measurements on single and double layer graphene on SiO 2 exfoliated from highly ordered pyrolitic graphite and high-temperature, high-pressure grown materials were recently reported [17]. The resistivity was shown to drastically reduce upon heating from 300-500 K [17] with the results obtained for single layer graphene in good agreement with theory [18]. The decrease in resistance at room temperature and above has been proposed to originate from the thermal generation of carriers whilst the shape of the resistance curve is determined by hole scattering on the long and short range disorder and acoustic phonons [18].…”

Transient stimulated emission from multi-split-gated graphene structure

“…where we take into account that 4e dpΦ rxpt /(2π ) 2 = s r ∇ x · I rxt and the right-hand side describes the recombination processes. 17 We consider the momentum relaxation caused by Gaussian and short-range disorder potentials, 15 with the total rate ν p . The Gaussian disorder is described by the correlation function V 2 exp −(x − x ′ ) 2 /2l 2 c , where V is the averaged energy and l c is the correlation length.…”

“…The relaxation rate due to the short-range disorder potential has a similar (if l c → 0) dependence ∝ υ 0 p/ , with an explicit expression for the characteristic velocity υ 0 given in Ref. 15. Assuming that the carrier temperatures are equal to the lattice temperature, T xt = T , the current density can be written in the following expression:…”

Plasmons in tunnel-coupled graphene layers: Backward waves with quantum cascade gain

“…where D ≃ 30 eV is the deformation potential of graphene [43], ρ = 7.6 × 10 −7 kg/m 2 is its mass density, and c ≈ 0.02v 0 is the sound velocity [44].…”