2011
DOI: 10.1016/j.snb.2010.12.046
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Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection

Abstract: extremely sensitive NO 2 detection. The gas exposed uppermost layer of the multi layer device is screened from the SiC by the intermediate layers leading to a p-type nature with a higher concentration of charge carriers and therefore, a lower gas response. The single layer graphene device is thought to undergo an n-p transition upon exposure to increasing concentrations of NO 2 indicated by a change in response direction. This transition is likely to be due to the transfer of electrons to NO 2 making holes the… Show more

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Cited by 306 publications
(208 citation statements)
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“…Furthermore, we assume the freestanding graphene layers have the same in-plane strain as they have on SiC, in order to eliminate all differences that originate in changing the strain. We choose a very dense concentration of molecules, corresponding to one NO 2 molecule on a 2 × 2 graphene sheet, i.e., one NO 2 molecule per eight surface carbon atoms, in order to determine whether or not NO 2 is alone capable of generating the n-p transition observed in graphene [12,14].…”
Section: Methodsmentioning
confidence: 99%
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“…Furthermore, we assume the freestanding graphene layers have the same in-plane strain as they have on SiC, in order to eliminate all differences that originate in changing the strain. We choose a very dense concentration of molecules, corresponding to one NO 2 molecule on a 2 × 2 graphene sheet, i.e., one NO 2 molecule per eight surface carbon atoms, in order to determine whether or not NO 2 is alone capable of generating the n-p transition observed in graphene [12,14].…”
Section: Methodsmentioning
confidence: 99%
“…Subsequent carbon layers are strongly n doped due to the influence of this carbon buffer layer [9,10,10,11]. There have been several successful experimental studies of using graphene grown on SiC as a NO 2 sensor [3,4,[12][13][14][15][16]. At sufficiently high concentrations of NO 2 , an n to p type shift of the graphene layer was found [4,12,14].…”
Section: Introductionmentioning
confidence: 99%
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“…Up to now, graphene materials were prepared by epitaxial growth (Pearce et al 2011), chemical vapor deposition (Reina et al 2009), mechanical exfoliation (Robinson et al 2008), and thermal or chemical modification (Park and Ruoff 2009). Graphene oxide (GO) has been used for preparing graphene materials.…”
Section: Introductionmentioning
confidence: 99%
“…The sensing measurements were carried out as follows: the device was exposed to 60 s pulses of test gas ranging from 40-400 ppm of NO or 100-1000 ppm of CO (one test gas at a time) followed by 120 s pulse of 20% O2 in N2. The normalized sensor response was calculated as the difference in resistance of the device under test gas and that measured in 20% O2 in N2 atmosphere, divided by the latter resistance value, as described elsewhere [28].…”
Section: Device Structure Fabrication and Sensor Measurementsmentioning
confidence: 99%