Void free bonding of large silicon dice using gold-tin alloys

Matijasevic, G.; Wang, C.Y.; Lee, C.C.

doi:10.1109/33.62563

Cited by 50 publications

(15 citation statements)

References 27 publications

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“…1 Although showing satisfactory properties such as suitable melting temperature (280°C), good thermal and electrical conductivities, and good fluidity and wettability, this alloy system has some problems associated with low ductility and high cost, preventing its wide application. Recently, Zn-Al base alloys have been suggested as candidates for the Pbfree high-temperature solder.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Reaction Between Cu Substrates and Zn-Al Base High-Temperature Pb-Free Solders

Takaku

Lazuardi

Ohnuma

et al. 2007

Journal of Elec Materi

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Chemical reactions between Cu substrates and Zn-Al high-temperature solder alloys, , at temperatures ranging from 420°C to 530°C were experimentally investigated by a scanning electron microscope using backscattered electrons (SEM-BSE) and an electron probe microanalyzer (EPMA). Intermediate phases (IMPs), b(A2) or b¢(B2), c(D8 2 ), and e(A3) phases formed and grew during the soldering and aging treatments. The consumption rate of the IMP for Cu substrates is described by the square root of t in both the alloys, while the additional Cu in the molten Zn-Al alloy slightly suppresses the consumption of Cu substrates. The growth of IMPs during soldering treatment is controlled by the volume diffusion of constituent elements, and its activation energy increases in the order of Q e < Q c < Q b . In view of the aging process, the growth of IMPs is considered to be controlled by the volume diffusion. In particular, the layer thickness of c rapidly grows over 200°C, although the thickness of the b layer grows very slowly.

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Section: Introductionmentioning

confidence: 99%

Interfacial Reaction Between Cu Substrates and Zn-Al Base High-Temperature Pb-Free Solders

Takaku

Lazuardi

Ohnuma

et al. 2007

Journal of Elec Materi

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“…This property makes Au20Sn useful for bonding devices that are sensitive to high processing temperature but need good creep resistance, such as GaAs 4-6 or large Si die on alumina. 7 In addition, the high thermal conductivity of Au20Sn (57 W/m°C) makes it particularly useful for bonding higher power devices that demand good heat dissipation.…”

Section: Introductionmentioning

confidence: 99%

Controlling the microstructure from the gold-tin reaction

Tsai

Chang

Shieh

et al. 2005

Journal of Elec Materi

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“…The image indicates that most areas are integral. Early researchers always tried to avoid bonding voids, because these voids caused large local stress and decreased performances of the devices [14,15]. However, the poorly bonded LEDs showed almost no voids in the Au/Sn bonding layer, but chips were broken after LLO process, which was proved by SAM and SEM images.…”

Section: Resultsmentioning

confidence: 99%

Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes

Tian

Sun

Chen

et al. 2010

Sci. China Technol. Sci.

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Au/Sn solder bonding on Si substrates was used to fabricate the GaN-based vertical structure light emitting diodes (VSLEDs). The phase reaction of Au/Sn solder under different bonding conditions was investigated by the measurement of electron back scattering diffraction (EBSD), and the characteristics of VSLED were analyzed by scanning acoustic microscope (SAM), Raman scattering, current-voltage (I-V) and light output-current (L-I) curves. After the bonding process, horizontal stripes of Au/Sn phase (δ phase) and Au 5 Sn phase (ζ phase) were redirected to vertical stripes, and δ phase tended to move to the solder joint. Sn interstitial diffusion led to the distribution of δ phase and voids in Au/Sn solder, which could be seen in SAM and SEM images. Vertical distribution of the δ phase and ζ phase with proper voids in the Au/Sn bonding layer showed the best bonding quality. Good bonding quality led to little shift of the E 2 -high mode of Raman spectra peak in GaN after laser lift off (LLO). It also caused more light extraction and forward bias reduction to 2.9 V at 20 mA. GaN, LED, bonding, Au/Sn, phase Citation:Tian P F, Sun Y J, Chen Z Z, et al. Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes.

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Void free bonding of large silicon dice using gold-tin alloys

Cited by 50 publications

References 27 publications

Interfacial Reaction Between Cu Substrates and Zn-Al Base High-Temperature Pb-Free Solders

Interfacial Reaction Between Cu Substrates and Zn-Al Base High-Temperature Pb-Free Solders

Controlling the microstructure from the gold-tin reaction

Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes

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