VLSI Device Fundamentals

Prince, J.L.

doi:10.1007/978-3-642-88640-9_2

Cited by 3 publications

(1 citation statement)

References 30 publications

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“…They found that for an optimum power-delay product, the current density increases about linearly with the reduction in device dimensions. For 12L type circuits, Prince (1982) deduced separately a set of scaling rules based on a linear scaling of the delay time. He found that the current density varies approximately with the square of the dimensional scaling.…”

Section: Impact Of Device Scalingmentioning

confidence: 99%

Electromigration in metals

1989

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This paper provides an overview on the current understanding of electromigration in metals. The discussion is first focused on studies in bulk metals and alloys. This part includes a thermodynamic formulation of electromigration, a kinetic analysis of the atomic processes and a review of the theory. In addition, experimental results in interstitial and substitutional systems are summarised. The second part of the paper reviews the studies in metallic thin films. This emerged as an important area of electromigration studies since the late 1960s when electromigration damage was found to cause failure of conductor lines in integrated circuits. The discussion will review first the basic nature of electromigration in thin films with emphasis on the role of grain boundaries in mass transport and damage formation. Then the materials issues of electromigration will be explored according to the scaling trends in VLSI technology. Finally, the recent results of electromigration in fine lines and device contacts of dimensions in the micrometre range are discussed.

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Section: Impact Of Device Scalingmentioning

confidence: 99%