VLS Silicon Nanowires based Resistors for Chemical Sensor Applications

Ni, Liang; Jacques, Emmanuel; Rogel, Régis; Salaün, Anne‐Claire; Pichon, Laurent; Wenga, Gertrude

doi:10.1016/j.proeng.2012.09.128

Cited by 14 publications

(11 citation statements)

References 6 publications

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“…In 2012, Ni and co-workers developed two types of resistor-based sensors by growing (bare) SiNWs from gold-modified, interdigitated, comb-shaped and V-shaped groove structures [ 51 ]. The resulting devices were tested as a chemical sensor by exposing them to different ammonia concentrations in nitrogen.…”

Section: Gas-phase Sensingmentioning

confidence: 99%

Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Cao

Sudhölter

Smet

2013

Sensors

134

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Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed.

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Section: Gas-phase Sensingmentioning

confidence: 99%

Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Cao

Sudhölter

Smet

2013

Sensors

134

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“…So far, the most widely used NH 3 gas sensors are based on bulk or nanostructured metal oxide semiconductor materials that require a high working temperature of typically 200–450 °C. − This leads to a high-power consumption and limited application scenarios for wearable and portable electronics that are supposed to attach to or be in the close proximity of skin surfaces. Therefore, in recent years, intensive research efforts have been devoted to the development of advanced gas sensors that can operate at room temperature (RT), with nanostructured channel materials, such as silicon nanowires (SiNWs), − conductive polymer, , carbon nanotubes, , graphene, or their composite. , Particularly, the one-dimensional SiNW channels, with high surface-to-volume ratio and chemical activity on the sidewall, have been considered as the ideal choice for NH 3 gas sensing that can work at RT, thanks to an efficient adsorption of gas molecular species on the sidewall of tiny SiNW channels, typically with diameter <80 nm. , In addition, the high stability and biocompatibility of SiNWs are also beneficial for developing a new generation of wearable and portable chemical/biological sensors. − …”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive Ammonia Gas Detection at Room Temperature by Integratable Silicon Nanowire Field-Effect Sensors

Song

et al. 2021

ACS Appl. Mater. Interfaces

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Toxic gas monitoring at room temperature (RT) is of great concern to public health and safety, where ultrathin silicon nanowires (SiNWs), with diameter <80 nm, are ideal one-dimensional candidates to achieve high-performance field-effect sensing. However, a precise integration of the tiny SiNWs as active gas sensor channels has not been possible except for the use of expensive and inefficient electron beam lithography and etching. In this work, we demonstrate an integratable fabrication of fieldeffect sensors based on orderly SiNW arrays, produced via step-guided in-plane solid−liquid−solid growth. The back-gated SiNW sensors can be tuned into suitable subthreshold detection regime to achieve an outstanding field-effect sensitivity (75.8% @ 100 ppm NH 3 ), low detection limit (100 ppb), and excellent selectivity to NH 3 gas at RT, with fast response/recovery time scales (T res /T rec ) of 20 s (at 100 ppb NH 3 ) and excellent repeatability and high stability over 180 days. These outstanding sensing performances can be attributed to the fast charge transfer between adsorbed NH 3 molecules and the exposed SiNW channels, indicating a convenient strategy to fabricate and deploy high-performance gas detectors that are widely needed in the booming marketplace of wearable or portable electronics.

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“…Silicon NWs with outstanding mobility of conduction electrons and holes (1400 and 450 cm 2 V −1 s −1 , respectively) appear to be one of the most popular active materials in NW chemical sensors . Devices based on FET and resistor configurations have been frequently fabricated, which display activity in response to various gaseous species, that is, NO 2 , NH 3 , H 2 , and H 2 O . Porous silicon nanowires, possessing significantly enhanced surface area and defect density, are promising materials for the development of integrated gas sensors operating at room temperature, benefiting from the mature chemical etching technology in terms of large‐scale fabrication, cost savings, and convenience for hybrid design .…”

Section: Chemical/biological Sensorsmentioning

confidence: 99%

“…Therefore, compositional and structural design may play a crucial role in realizing outstanding sensor performance. Diverse types of semiconductor NWs, such as silicon, [163][164][165][166] ZnO, In 2 O 3 , and SnO 2 nanowires and their hybrids with other compounds, 162,[167][168][169][170] have exhibited amazing detection capability for various gases.…”

Section: Nanowire Photodetectorsmentioning

confidence: 99%

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

Sun

et al. 2019

InfoMat

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As natural one‐dimensional confined electron transport channels and photon propagation paths, nanowires (NWs) display unmatched properties and huge potential for application in diverse fields. The ability to construct a nanoscale functional system would enable significant advances in the currently desired miniaturized device integration. To date, the basic properties of all types of nanowire crystals, including metallic NWs, as well as group IV‐related, III‐V/II‐VI compounds, and metal oxide NWs, are well understood. Regarding future work, compositional (ie, doping and alloying) and structural (defect and heterostructure) designs to flexibly realize custom‐made functionality are emphasized. Along this line, recent progress is reviewed, including the basic properties (nanowire mechanics, electronics, and photonics) and applications such as photodetectors and chemical/biological sensors. A review of the correlations between the compositional/structural configuration of nanowires and the corresponding functionality is also presented. The future development direction of this field is concluded and highlighted at the end.

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VLS Silicon Nanowires based Resistors for Chemical Sensor Applications

Cited by 14 publications

References 6 publications

Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Highly Sensitive Ammonia Gas Detection at Room Temperature by Integratable Silicon Nanowire Field-Effect Sensors

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

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