Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Cao, Anping; Sudhölter, Ernst J. R.; Smet, Louis C. P. M. de

doi:10.3390/s140100245

Cited by 134 publications

(83 citation statements)

References 80 publications

(111 reference statements)

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“…Single-crystalline SiNWs are fabricated via bottom-up or top-down methods with uniform spatial dimensions and high carrier mobility [6][7][8][9][10][11]. FETs based on arrays of SiNWs, usually modified with molecular groups, have been predominantly reported to be highly sensitive and selective to volatile organic compounds (VOCs) [2,4,[12][13][14][15][16][17][18]. Owing to the high surface-tovolume ratio of SiNWs, surface states have a large impact on the device performance and often require surface passivation.…”

Section: Introductionmentioning

confidence: 99%

Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

et al. 2015

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We report on an electrostatically formed nanowire (EFN)-based sensor with tunable diameters in the range of 16 nm to 46 nm and demonstrate an EFNbased field-effect transistor as a highly sensitive and robust room temperature gas sensor. The device was carefully designed and fabricated using standard integrated processing to achieve the 16 nm EFN that can be used for sensing without any need for surface modification. The effective diameter for the EFN was determined using Kelvin probe force microscopy accompanied by threedimensional electrostatic simulations. We show that the EFN transistor is capable of detecting 100 parts per million of ethanol gas with bare SiO 2 .

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Section: Introductionmentioning

confidence: 99%

Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

et al. 2015

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“…Figure 17 is used to show the proper functionality of the CSA block. The logic level of Sum [2] and sum [3] (3rd and 4th bit of sum) of three models are also shown in the figure. Good voltage levels are maintained which shows the potential to integrate the device into large scale.…”

Section: Pentium 4 Adder Implementationmentioning

confidence: 99%

“…Emerging future nanoelectronics is being extensively explored for several applications [1][2][3][4][5][6]. More specifically molecular devices can play an important role both for sensing and for computational applications with huge advantages in terms of integration capabilities, functional density, and performance.…”

Section: Introductionmentioning

confidence: 99%

VHDL-AMS Simulation Framework for Molecular-FET Device-to-Circuit Modeling and Design

Graziano

Zahir

Mehdy

et al. 2018

Active and Passive Electronic Components

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We concentrate on Molecular-FET as a device and present a new modular framework based on VHDL-AMS. We have implemented different Molecular-FET models within the framework. The framework allows comparison between the models in terms of the capability to calculate accurate -characteristics. It also provides the option to analyze the impact of Molecular-FET and its implementation in the circuit with the extension of its use in an architecture based on the crossbar configuration. This analysis evidences the effect of choices of technological parameters, the ability of models to capture the impact of physical quantities, and the importance of considering defects at circuit fabrication level. The comparison tackles the computational efforts of different models and techniques and discusses the trade-off between accuracy and performance as a function of the circuit analysis final requirements. We prove this methodology using three different models and test them on a 16-bit tree adder included in Pentium 4 that, to the best of our knowledge, is the biggest circuits based on molecular device ever designed and analyzed.

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“…This is due to their high surface to volume ratios, which provide additional effective area and can lead to an increase in device performance and sensitivities. NWs based sensors detect signals by reacting with the target material and translating the reaction into a measurable response such as impedance, voltage, or current [15,22]. As these NWs will be critical building blocks of future nanosystems, the ability to produce them at desired locations, in a controlled manner on any substrate is of great importance [1].…”

Section: Introductionmentioning

confidence: 99%

“…NWs were originally called nano-whiskers due to their whisker-like appearance. For example, Silicon (Si) [23–25,22,26], Au [27,28], Ag [29,30], Ni [31], ZnO [32,33], CuO [34], SnO 2 [35] etc., NWs have been explored over the past decade due to their unique 1D morphology and electrical, mechanical, optical, magnetic, and thermal properties. The oriented grown and integration of NWs in micro devices has been explored (Figure 1).…”

Section: Introductionmentioning

confidence: 99%

Silica nanowires: Growth, integration, and sensing applications

et al. 2014

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This review (with 129 refs.) gives an overview on how the integration of silica nanowires (NWs) into micro-scale devices has resulted, in recent years, in simple yet robust nano-instrumentation with improved performance in targeted application areas such as sensing. This has been achieved by the use of appropriate techniques such as di-electrophoresis and direct vapor-liquid-growth phenomena, to restrict the growth of NWs to site-specific locations. This also has eliminated the need for post-growth processing and enables nanostructures to be placed on pre-patterned substrates. Various kinds of NWs have been investigated to determine how their physical and chemical properties can be tuned for integration into sensing structures. NWs integrated onto interdigitated micro-electrodes have been applied to the determination of gases and biomarkers. The technique of directly growing NWs eliminates the need for their physical transfer and thus preserves their structure and performance, and further reduces the costs of fabrication. The biocompatibility of NWs also has been studied with respect to possible biological applications. This review addresses the challenges in growth and integration of NWs to understand related mechanism on biological contact or gas exposure and sensing performance for personalized health and environmental monitoring.

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Silicon Nanowire‐Based Devices for Gas-Phase Sensing

Cited by 134 publications

References 80 publications

Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

VHDL-AMS Simulation Framework for Molecular-FET Device-to-Circuit Modeling and Design

Silica nanowires: Growth, integration, and sensing applications

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