VLS growth of GaN nanowires on various substrates

Gottschalch, V.; Wagner, G.; Bauer, Jens; Paetzelt, Hendrik; Shirnow, M.

doi:10.1016/j.jcrysgro.2008.08.013

Cited by 52 publications

(43 citation statements)

References 16 publications

(18 reference statements)

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“…Thus, the contact of gaseous nitrogen with the liquid gold-gallium droplet seems to be sufficient to form GaN with a unidirectional structure as proposed by Gottschalch et al [11]. Thus, the actual mechanism is probably related to a VLS mechanism with regards to gallium.…”

Section: Nonetheless Isolated Cases Of Quasi-spherical Droplets Werementioning

confidence: 72%

“…In this particular metal cluster catalysis, if one element which is to form the rod is not soluble in the metal catalyst, as in the similar case of nitrogen in gold [8,11] for example, the nanorods are not formed, as confirmed earlier by Duan et al [7]. Nonetheless, recent experiments have demonstrated the formation of GaN nanowires employing gold clusters as catalyst when triethyl gallium and ammonia were used as the reagents [8,11].…”

Section: Introductionmentioning

confidence: 69%

“…This observation may be explained by swelling in the vapor-liquid (V-L) phase, where the gallium is dissolved by gold, thereby increasing the droplet size. Incorporation of nitrogen is discarded because of its negligible solubility in gold at the reaction temperature [8,11].…”

Section: Semmentioning

confidence: 99%

“…Since the elements forming the rods have to be dissolved by the metal catalyst [8], and nitrogen is not miscible in gold at 900˚C [8,11], the prediction indicates that GaN rods could not be grown by this method. However, the gold-catalyst did produce rods in the ammono-CVD system.…”

Section: Nonetheless Isolated Cases Of Quasi-spherical Droplets Werementioning

confidence: 99%

“…Nonetheless, recent experiments have demonstrated the formation of GaN nanowires employing gold clusters as catalyst when triethyl gallium and ammonia were used as the reagents [8,11].…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Characterization of GaN Rods Prepared by Ammono-Chemical Vapor Deposition

Arízaga¹,

Hernández²,

Cayetano-Castro³

et al. 2012

ACES

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GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous quartz. The reactive Ga species in vapor the phase was formed with NH 4 Cl and gallium. The unidirectional growth was catalyzed with gold nanoparticles formed onto the substrate prior to the CVD reaction in order to induce a vapor-liquid-solid (VLS) mechanism. However, this method of synthesis seems to be influenced by other growth mechanisms which formed additional depositions of GaN with different morphology than the rods catalyzed by gold nanoparticles. The moieties of GaN that grew in the absence of gold formed branches in the rods or increased the lateral growth of rods resulting in larger diameters than the size of the gold particle that guided the growth.

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Section: Nonetheless Isolated Cases Of Quasi-spherical Droplets Werementioning

confidence: 72%

Section: Introductionmentioning

confidence: 69%

Section: Semmentioning

confidence: 99%

Section: Nonetheless Isolated Cases Of Quasi-spherical Droplets Werementioning

confidence: 99%

“…Nonetheless, recent experiments have demonstrated the formation of GaN nanowires employing gold clusters as catalyst when triethyl gallium and ammonia were used as the reagents [8,11].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Synthesis and Characterization of GaN Rods Prepared by Ammono-Chemical Vapor Deposition

Arízaga¹,

Hernández²,

Cayetano-Castro³

et al. 2012

ACES

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Axial GaN Nanowire‐Based LEDs

Wang

Nguyen

Zhao

et al. 2014

Wide Band Gap Semiconductor Nanowires 2

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Axial GaN Nanowire-based LEDs IntroductionCurrent solid state lamps rely on the use of blue light-emitting diodes (LEDs) and the generation of green/red light by phosphor-based down-conversion process. The phosphor-based approach, however, has several fundamental drawbacks, which include a poor color rendition particularly in the red spectral range, significant efficiency loss related to the Stokes shift and phosphor degradation [SCH 05]. In this regard, there is an urgent need to develop high-efficiency GaN-based LEDs in the green and red wavelength range, which has been limited by the lack of suitable substrates, as well as the large lattice mismatch between InN and GaN and the resulting large densities of dislocations and polarization fields for conventional quantum well (QW) LEDs. Moreover, the external quantum efficiency (EQE) of GaN-based QW LEDs generally decreases considerably with increasing injection current. Probable causes for the efficiency droop include defect-assisted carrier leakage [VAM 09], Auger recombination [SHE 07], carrier delocalization [MON 07], inefficient carrier injection related to the presence of internal polarization fields [KIM 07] and the poor hole transport/injection process [XIE 08]. Such critical issues can be addressed, by and large, by utilizing one-dimensional (1D) III-nitride nanowire (NW)/nanorod heterostructures, which can be grown directly on low-cost, large area foreign substrates, and can offer significantly reduced dislocation densities and strain distribution, due to the effective lateral stress relaxation [GLA 06] (for more details, we can refer to Chapter 2 in Vol. 1 [CON 14]). Moreover, such nanoscale structures promise improved light extraction efficiency, due to the large surface-to-volume ratios [HEN 11].III-nitride NW LEDs can be fabricated by using either the top-down or bottomup method. In the last decade, tremendous progress has been made in the epitaxial Chapter written

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Metal‐Organic Chemical Vapor Deposition Growth of ZnO Nanowires

Sallet¹

2014

Wide Band Gap Semiconductor Nanowires 1

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Metal-organic chemical vapor deposition (MOCVD) (also called metal-organic chemical vapor phase epitaxy (MOVPE) to emphasize the crystallographic relationship) has been, for a long time, one of the most commonly employed techniques in the microelectronics industry for the realization of high-performance electronic and optoelectronic devices [RAZ 89]. Besides the III-V and silicon-based semiconductors, a wide variety of functional materials can be achieved by using MOCVD, including II-VI semiconductors, oxides, magnetic compounds, etc. A large number of elements (from columns I-VII, as well as transitions metals) can be commercially supplied under several organometallic forms with a high purity, thus enlarging the field of potential future applications. That makes MOCVD a technique of choice for developing original materials and/or architectures, from the basic research to the industrial fabrication. The ability to transport chemical species from the bubbler to the reactor, the accurate control of the partial pressures (reactants and dopants), and the high uniformity and reproducibility that are obtained over large areas constitute the main advantages of MOCVD.II-VI semiconductors including selenides, tellurides and sulfides have been widely grown in the past few decades for a large number of applications in IR, visible and UV emitting devices, single photon sources, high energy detectors and solar cells, etc. More recently, the MOCVD growth of oxide compounds in the (Zn, Mg, Cd, Mn)-O system has attracted much research attention, motivated by a unique combination of physical properties in zinc oxide (ZnO)-based materials, which paves the way for original realizations in optoelectronics, sensors, energy harvesting Chapter written by Vincent SALLET.Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects and Growth, First Edition. Edited by Vincent Consonni and Guy Feuillet.

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VLS growth of GaN nanowires on various substrates

Cited by 52 publications

References 16 publications

Synthesis and Characterization of GaN Rods Prepared by Ammono-Chemical Vapor Deposition

Synthesis and Characterization of GaN Rods Prepared by Ammono-Chemical Vapor Deposition

Axial GaN Nanowire‐Based LEDs

Metal‐Organic Chemical Vapor Deposition Growth of ZnO Nanowires

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