In
transmission electron microscopy (TEM) the interaction of an
electron beam with polymers such as P3HT:PCBM photovoltaic nanocomposites
results in electron beam damage, which is the most important factor
limiting acquisition of structural or chemical data at high spatial
resolution. Beam effects can vary depending on parameters such as
electron dose rate, temperature during imaging, and the presence of
water and oxygen in the sample. Furthermore, beam damage will occur
at different length scales. To assess beam damage at the angstrom
scale, we followed the intensity of P3HT and PCBM diffraction rings
as a function of accumulated electron dose by acquiring dose series
and varying the electron dose rate, sample preparation, and the temperature
during acquisition. From this, we calculated a critical dose for diffraction
experiments. In imaging mode, thin film deformation was assessed using
the normalized cross-correlation coefficient, while mass loss was
determined via changes in average intensity and standard deviation,
also varying electron dose rate, sample preparation, and temperature
during acquisition. The understanding of beam damage and the determination
of critical electron doses provides a framework for future experiments
to maximize the information content during the acquisition of images
and diffraction patterns with (cryogenic) transmission electron microscopy.