Visualization of trapped charges being ejected from organic thin-film transistor channels by Kelvin-probe force microscopy during gate voltage sweeps

Yamagishi, Yuji; Kobayashi, Kei; Noda, Kei; Yamada, Hirofumi

doi:10.1063/1.4943140

Cited by 12 publications

(8 citation statements)

References 21 publications

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“…Although OFET devices do not involve ionic conductivity in operation, the following example still demonstrate the insight for electronic charge dynamics. Yamagishi et al used KPFM to perform millisecond resolution surface potential mapping on OFETs made from DNTT with different gate bias 422 and successfully revealed the different time scales for the decay of free carriers and trapped carriers inside the film after turning off the device. 415 Additionally, KPFM reveals the spatial inhomogeneity of carrier diffusion rate in operating device channels.…”

Section: Kelvin Probe Force Microscopymentioning

confidence: 99%

Operando Characterization of Organic Mixed Ionic/Electronic Conducting Materials

Matta

Paulsen

et al. 2022

Chem. Rev.

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Operando characterization plays an important role in revealing the structure− property relationships of organic mixed ionic/electronic conductors (OMIECs), enabling the direct observation of dynamic changes during device operation and thus guiding the development of new materials. This review focuses on the application of different operando characterization techniques in the study of OMIECs, highlighting the time-dependent and bias-dependent structure, composition, and morphology information extracted from these techniques. We first illustrate the needs, requirements, and challenges of operando characterization then provide an overview of relevant experimental techniques, including spectroscopy, scattering, microbalance, microprobe, and electron microscopy. We also compare different in silico methods and discuss the interplay of these computational methods with experimental techniques. Finally, we provide an outlook on the future development of operando for OMIEC-based devices and look toward multimodal operando techniques for more comprehensive and accurate description of OMIECs.

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Section: Kelvin Probe Force Microscopymentioning

confidence: 99%

Operando Characterization of Organic Mixed Ionic/Electronic Conducting Materials

Matta

Paulsen

et al. 2022

Chem. Rev.

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“…360 Yamagishi et al utilized KPFM to visualize trapped charges in organic thin-lm transistor (OTFT) channels. 361 KPFM was utilized in the biological area to examine the effects of surface potential on microbial adhesion on various metals. The surface potential of the microbial was dependent on adsorbents and was linked with changes in cellular metabolism and motility.…”

Section: Combination Of Afm With Kelvin Methods -Kelvin Probe Force MImentioning

confidence: 99%

Recent advances in hybrid measurement methods based on atomic force microscopy and surface sensitive measurement techniques

2017

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“…The semiconductor of choice is dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT), whose deep‐lying highest occupied molecular orbital (HOMO) and outstanding hole mobility provide a particularly intriguing platform for tackling the interplay between charge injection and transport. Unlike previous reports of potential measurements on DNTT transistors, our primary questions are how to understand attributes of different device structures and on how extractable parameters are physically correlated. More importantly, our systematic flow of analysis exemplifies a robust evaluation scheme that not only emphasizes the final values but also puts significant efforts in validation and cross‐check of the model that produces these values.…”

Section: Introductionmentioning

confidence: 99%

Potentiometric Parameterization of Dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene Field‐Effect Transistors with a Varying Degree of Nonidealities

Kim

Thomas

Kim

et al. 2018

Adv Elect Materials

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in a fully standardized manner with, for instance, no extra light, heat, or active areas involved. [4] By contrast, widely discussed parameters (i.e., charge-carrier mobility and threshold voltage, V T ) for organic field-effect transistors (OFETs) are model parameters, meaning that the numbers are inherently dependent on the model used as well as the procedure followed to implement this model. [5,6] Therefore, the lack of consensus may lead to discrepancies in parameters extracted even from the same current-voltage curve.In 2004, Horowitz et al. summarized and extended a series of their earlier works to clarify nonidealities, or disagreement with metal-oxide-semiconductor field-effect transistors (MOSFETs) in OFET devices. [7] As illustrated here, gate-voltage (V G ) dependence of mobility and existence of the contact resistances (R c ) are two common and theoretically justifiable sources of deviations from ideal MOSFET characteristics. Until recently, many experimental studies employed techniques such as the transmission-line method (TLM) or gated fourpoint probe measurements (gFPP), which can in principle directly probe these phenomena by separating the channel and contact properties. [8][9][10][11][12][13][14] In our view, the reported data bring strong evidence for the pronounced variability in relative strengths, and voltage-or structure dependence of the contact and channel effects, which makes different theoretical frameworks often necessary to understand different devices. Nonetheless, the MOSFET current-voltage model has been employed quite universally for simple parameter extraction. In 2016, Gundlach and co-workers used impedance spectroscopy to systematically address mobility overestimation in rubrene single-crystal transistors, [15] an issue that in fact originates from neglecting R c and/or noncontextually adopting simplified equations. In this context, it is timely to critically reassess basic assumptions of the device parameters, specific behavioral nonidealities, and associated calculation issues. Ideally, growing efforts into such a process will be transformed into carefully thought-out and broadly accepted practices for OFET research.In this article, we report on the use of scanning Kelvin probe microscopy (SKPM) and correlated analysis aimed at generalizable parameterization. SKPM is a powerful, surface-sensitive technique that can directly probe critical resistive pathways in OFETs to quantify material-and interface-related parameters. Furthermore, SKPM holds some advantages over the TLM or gFPP in that neither averaging Taking full account of the contact effects and including an explicit threshold voltage in calculation are shown to be critical to access the intrinsic carrier mobility, while simple derivative-based extraction may over-or underestimate it. Further analytical developments correlate individual physical parameters, leading to the discovery that pentafluorobenzenethiol self-assembled on gold predominantly affects the carrier mobility rather than the injection barrier.

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Visualization of trapped charges being ejected from organic thin-film transistor channels by Kelvin-probe force microscopy during gate voltage sweeps

Cited by 12 publications

References 21 publications

Operando Characterization of Organic Mixed Ionic/Electronic Conducting Materials

Operando Characterization of Organic Mixed Ionic/Electronic Conducting Materials

Recent advances in hybrid measurement methods based on atomic force microscopy and surface sensitive measurement techniques

Potentiometric Parameterization of Dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene Field‐Effect Transistors with a Varying Degree of Nonidealities

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