Visible to near-infrared broadband photodetector employing thin film topological insulator heterojunction (p-TlBiSe2/n-Si) diode

Maurya, Gyanendra Kumar; Gautam, Vidushi; Ahmad, Faizan; Singh, Ranjeet Kumar; Kandpal, Kavindra; Kumar, Rachana; Kumar, Mahesh; Kumar, Pramod; Tiwari, Akhilesh

doi:10.1016/j.apsusc.2022.155813

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Application Of the Topological Magnetic Heterojunction As A ...1

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Cited by 5 publications

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“…The functionality of the diodes is primarily influenced by two factors: the series resistance (R S ) and shunt resistance (R SH ). 24,25 The series resistance of a heterojunction diode decreases as the current flow through it increases. Conversely, the shunt resistance diminishes the magnitude of leakage current and enhances the overall efficiency of the diode.…”

Section: Application Of the Topological Magnetic Heterojunction As A ...mentioning

confidence: 99%

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni₈₀Fe₂₀/TI (Bi₂Te₃/Bi₂Se₃/Bi₂Te₂Se)/p-Si devices

Singh,

Yadav,

Kumar

et al. 2024

Phys. Chem. Chem. Phys.

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Section: Application Of the Topological Magnetic Heterojunction As A ...mentioning

confidence: 99%

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni₈₀Fe₂₀/TI (Bi₂Te₃/Bi₂Se₃/Bi₂Te₂Se)/p-Si devices

Singh,

Yadav,

Kumar

et al. 2024

Phys. Chem. Chem. Phys.

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Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector

Maurya,

Gautam,

Ahmad

et al. 2024

J. Electron. Mater.

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Phase Relations in the Tl2Te-TlBiTe2-TlGdTe2 Compositions Region of the Tl-Bi-Gd-Te System and Magnetic Properties of the TlBi1−xGdxTe2 Solid Solutions

Imamaliyeva,

Huseynova,

Daraselia

et al. 2024

J. Phase Equilib. Diffus.

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Visible to near-infrared broadband photodetector employing thin film topological insulator heterojunction (p-TlBiSe2/n-Si) diode

Cited by 5 publications

References 77 publications

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni₈₀Fe₂₀/TI (Bi₂Te₃/Bi₂Se₃/Bi₂Te₂Se)/p-Si devices

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni₈₀Fe₂₀/TI (Bi₂Te₃/Bi₂Se₃/Bi₂Te₂Se)/p-Si devices

Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector

Phase Relations in the Tl2Te-TlBiTe2-TlGdTe2 Compositions Region of the Tl-Bi-Gd-Te System and Magnetic Properties of the TlBi1−xGdxTe2 Solid Solutions

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Visible to near-infrared broadband photodetector employing thin film topological insulator heterojunction (p-TlBiSe2/n-Si) diode

Cited by 5 publications

References 77 publications

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni80Fe20/TI (Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si devices

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni80Fe20/TI (Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si devices

Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector

Phase Relations in the Tl2Te-TlBiTe2-TlGdTe2 Compositions Region of the Tl-Bi-Gd-Te System and Magnetic Properties of the TlBi1−xGdxTe2 Solid Solutions

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Product

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Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni₈₀Fe₂₀/TI (Bi₂Te₃/Bi₂Se₃/Bi₂Te₂Se)/p-Si devices

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni₈₀Fe₂₀/TI (Bi₂Te₃/Bi₂Se₃/Bi₂Te₂Se)/p-Si devices