Visible photoluminescence from Ge + -implanted SiO 2 films thermally grown on crystalline Si

Ye, Y.H.; Zhang, J.Y.; Bao, Xiaoguang; Tan, Xi-Lin; Chen, L.F.

doi:10.1007/s003390050760

Cited by 8 publications

(6 citation statements)

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“…Red PL of Ge-implanted oxides was not so often achieved [31][32][33][34][35][36]. Yang et al obtained a broad PL between 1.5 and 2.1 eV by exciting with an Ar laser at 2.71 eV [32].…”

Section: Luminescence Of Ion-implanted Sio 2 Layersmentioning

confidence: 99%

“…Yang et al obtained a broad PL between 1.5 and 2.1 eV by exciting with an Ar laser at 2.71 eV [32]. Ye et al observed a yellow-orange peak at 2.1 eV and an infrared one at 1.6 eV (E ex = 5.17 eV) [33]. In both studies the PL is explained as an absorption within the Ge clusters followed by an emission of a defect center at the cluster surface.…”

Section: Luminescence Of Ion-implanted Sio 2 Layersmentioning

confidence: 99%

“…Based on Raman and absorption measurements Koch et al were able to show that the surface of nanoclusters contains imperfections and defects leading to surface states in the band gap of the nanocluster [122]. Further variants of this model include the tunneling of excitons to nearby located luminescence centers [123] and the application of this model to Ge nanoclusters [33]. The E center existing in many modifications depending on its chemical environment [124] is believed to be a precursor of the NOV (Fig.…”

Section: Luminescence Modelsmentioning

confidence: 99%

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Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Rebohle

Borany

Fröb³

et al. 2000

Appl Phys B

176

119

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The microstructural, optical and electrical properties of Si-, Ge-and Sn-implanted silicon dioxide layers were investigated. It was found, that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV (Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV. This PL is compared with that of Ar-implanted silicon dioxide and that of Si-and Ge-rich oxide made by rf magnetron sputtering. Based on PL and PL excitation (PLE) spectra we tentatively interpret the blue-violet PL as due to a T 1 → S 0 transition of the neutral oxygen vacancy typical for Si-rich SiO 2 and similar Ge-or Sn-related defects in Ge-and Sn-implanted silicon dioxide. The differences between Si, Ge and Sn will be explained by means of the heavy atom effect. For Geimplanted silicon dioxide layers a strong electroluminescence (EL) well visible with the naked eye and with a power efficiency up to 5 × 10 −4 was achieved. The EL spectrum correlates very well with the PL one. Whereas the EL intensity shows a linear dependence on the injection current over three orders of magnitude, the shape of the EL spectrum remains unchanged. The I − V dependence exhibiting the typical behavior of Fowler-Nordheim tunneling shows an increase of the breakdown voltage and the tunnel current in comparison to the unimplanted material. Finally, the suitability of Ge-implanted silicon dioxide layers for optoelectronic applications is briefly discussed. 78.60.F; 78.55; 61.72.T; 85.30.T; 78.66.J Since the early 60s Si has been the dominating material of microelectronics because of its excellent mechanical, chemical and electrical properties. However, with increasing miniaturization one approaches more and more the physical limits drawn by the material properties of Si. The increase of the line resistance and the corresponding parasitic capacitors with decreasing feature size is opposed to a further miniaturization and an enhancement of the clock rate. The PACS:

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“…Red PL of Ge-implanted oxides was not so often achieved [31][32][33][34][35][36]. Yang et al obtained a broad PL between 1.5 and 2.1 eV by exciting with an Ar laser at 2.71 eV [32].…”

Section: Luminescence Of Ion-implanted Sio 2 Layersmentioning

confidence: 99%

Section: Luminescence Of Ion-implanted Sio 2 Layersmentioning

confidence: 99%

Section: Luminescence Modelsmentioning

confidence: 99%

See 1 more Smart Citation

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Rebohle

Borany

Fröb³

et al. 2000

Appl Phys B

176

119

View full text Add to dashboard Cite

show abstract

“…The origin of the PL bands was attributed to radiative defects present at the Ge NCs/matrix interface, specifically, neutral oxygen vacancies ͑NOVs͒ such as ϵGe-Siϵ and/or ϵGe-Geϵ defects generated by the local deficiency of oxygen and the incorporation of Ge into the SiO 2 network surrounding the NCs. 5,8,9 Related to the EL measurements, the lower EL intensity of the hot implanted samples-see Fig. 3-can be explained based on the results of the TEM observations.…”

Section: Discussionmentioning

confidence: 99%

Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2

Bregolin

Behar

Sias

et al. 2009

Journal of Applied Physics

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Commonly, electroluminescence ͑EL͒ from Ge nanocrystals ͑Ge NCs͒ has been obtained by room temperature ͑RT͒ Ge implantation into a SiO 2 matrix followed by a high temperature anneal. In the present work, we have used a novel experimental approach: we have performed the Ge implantation at high temperature ͑T i ͒ and subsequently a high temperature anneal at 900°C in order to grow the Ge NCs. By performing the implantation at T i = 350°C, the electrical stability of the MOSLEDs were enhanced, as compared to the ones obtained from RT implantation. Moreover, by changing the implantation fluence from ⌽ = 0.5ϫ 10 16 and 1.0ϫ 10 16 Ge/ cm 2 we have observed a blueshift in the EL emission peak. The results show that the electrical stability of the hot implanted devices is higher than the ones obtained by RT implantation.

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“…In most of the previous studies, the foregoing experimental investigations on the origin of the optical centers in the nc-Ge-embedded SiO 2 films have accumulated abundant results [23,24]. However, the influences of thermal annealing and implanting processes on the optical properties in Ge/SiO 2 system are found to be relatively inadequate.…”

Section: Introductionmentioning

confidence: 98%

Optical properties of the low-energy Ge-implanted and annealed SiO2 films

Wang

et al. 2015

Optical Materials

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Visible photoluminescence from Ge + -implanted SiO 2 films thermally grown on crystalline Si

Cited by 8 publications

References 0 publications

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2

Optical properties of the low-energy Ge-implanted and annealed SiO2 films

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