Visible or Near-Infrared Light Self-Powered Photodetectors Based on Transparent Ferroelectric Ceramics

Abstract

Transparent ferroelectrics, with promising prospects in transparent optoelectronic devices, have unique advantages in self-powered photodetection. The self-powered photodetectors based on the photovoltaic effect have quicker responses and higher stability compared with those based on the pyroelectric effect. However, the ferroelectric ceramics previously applied are always opaque and have no infrared light-stimulated photovoltaic effect. Thus, it would be very meaningful to design photodetectors based on infrared light-stimulated photovoltaic effect and/or transparent ferroelectric ceramics. In this work, highly optical transparent pristine lead lanthanum zirconate titanate (PLZT) and band gap-engineered Ni-doped PLZT ceramics with excellent piezoelectric/ferroelectric properties were prepared by hot-pressing sintering. Stable and excellent photovoltaic performance was obtained for pristine PLZT and band gap-engineered PLZT. The value of short-circuit current density is at least 2 orders of magnitude larger than those in PLZT reported in previous works. The transparent PLZT and Ni-doped PLZT ferroelectric ceramics are applied as self-powered photodetectors for the first time for 405 nm and near-infrared light, respectively. The devices based on PLZT under 405 nm light exhibit high detectivity (7.15 × 10 7 Jones) and quick response (9.5 ms for rise and 11.5 ms for decay), and those devices based on Ni-doped PLZT, under near-infrared light filtered from AM 1.5 G simulated sunlight, also exhibit high detectivity (6.86 × 10 7 Jones) and short response time (8.5 ms), both presenting great potential for future transparent photodetectors.

Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6

“…1. By comparing the photoconductivity of CIPS with that from previous literatures [31][32][33][34][35] , we find comparable results in our devices. Importantly, noting that in all the experiments, our samples have the smallest thickness with the similar amplitude of Voc and , thus the CIPS has the smallest photoconductivity per excitation power if using the data in Table I.…”

“…The Voc and Isc can be controlled and even reversed by an external electric field. Based on this approach, the maximum Voc is obtained to be about 1.0 V and the enhanced photocurrent density is two orders of magnitude higher than that reported from the ferroelectric perovskite oxides [31][32][33][34][35] . Notably, above Tc, negligible photovoltage and photocurrent are observed in all devices in the paraelectric phase with restored high symmetry 36 .…”

Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor

“…This suggests that photoionization will be further enhanced with one carrier being trapped and another carrier flowing in a circular fashion, which reduces the large recombination of electron-hole pairs, enhancing photodetector performance [25]. The performance of this device is attractive compared to other similar detectors, and a comparison chart of the performance parameters with other similar devices is presented in Table 1 [20,21,[26][27][28][29][30][31][32][33]. According to previous literature reports, the HDA-BiI 5 -based device study did not systematically analyze the relevant parameter performance of the detector [20,21], however, compared with detectors of other materials, although some devices exhibit lower dark currents, our device is still very competitive as a photodetector without electron transport layer structure, considering the overall photoelectronic performance and simple fabrication process.…”

Polarization‐Modulated Photovoltaic Effect at the Morphotropic Phase Boundary in Ferroelectric Ceramics

“…For example, the wide bandgap (typically >3.2 eV) of ferroelectric oxides must be reduced to enhance the absorption of solar spectrum, however the robust and switchable FE polarization of those systems is also believed to be critical in promoting the BPVE. [14][15][16][17][18][19][20] Recently, by engineering the polar order in La-substituted BiFeO 3 epitaxial thin films, large ferroelectric PV enhancement has been reported. [21] The substitution of La on the A-site increases the rotational degree of freedom of the polarization and induces competing polar instabilities allowing formation of a compositional phase boundary between the ferroelectric and non-polar paraelectric phase.…”