BiFeO 3 thin films were fabricated by a simple spin-coating method as an electron transport layer in CH 3 NH 3 PbI 3 -based photovoltaic devices. Single-phase BiFeO 3 was obtained, which was confirmed by X-ray diffraction. To characterize photovoltaic properties, BiFeO 3 /CH 3 NH 3 PbI 3 -based photovoltaic devices were fabricated by different preparation steps for CH 3 NH 3 PbI 3 layer, and current densityvoltage characteristics of the photovoltaic devices showed rectifying behaviors. Comparing with the BiFeO 3 /CH 3 NH 3 PbI 3 photovoltaic device fabricated by a 1-step method, the conversion efficiency of the device fabricated by a 2-step method was improved. Bandgaps of the BiFeO 3 and CH 3 NH 3 PbI 3 layers were also determined from optical absorption measurements.