2017
DOI: 10.1364/oe.25.027624
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Visible light nearly perfect absorber: an optimum unit cell arrangement for near absolute polarization insensitivity

Abstract: Abstract:In this work, we propose an optimum unit cell arrangement to obtain near absolute polarization insensitivity in a metal-insulator-metal (MIM) based ultra-broadband perfect absorber. Our findings prove that upon utilizing this optimum arrangement, the response of the absorber is retained and unchanged over all arbitrary incidence light polarizations, regardless of the shape of the top metal patch. First, the impact of the geometry of the top nanopatch resonators on the absorption bandwidth of the overa… Show more

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Cited by 80 publications
(57 citation statements)
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“…at d i =80 nm). In such a case, the field pattern is similar to the one in [17]. At the same time, as will be exemplified below for our optimal parameters, a GMR can dominate at larger thicknesses of the dielectric layer.…”
Section: Physical Analysissupporting
confidence: 53%
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“…at d i =80 nm). In such a case, the field pattern is similar to the one in [17]. At the same time, as will be exemplified below for our optimal parameters, a GMR can dominate at larger thicknesses of the dielectric layer.…”
Section: Physical Analysissupporting
confidence: 53%
“…There are two absorption peaks at 477 and 783 nm, which almost perfectly match with the first and second absorption peaks of the main structure at 478 and 778 nm, respectively. This indicates that, in contrast with some of the earlier suggested absorbers [16,17], these peaks are mainly not due to the excitation of a PSP mode at the bottom Al 2 O 3 -Ti interface. Indeed, when there is a PEC at the bottom layer, any PSP mode cannot exist.…”
Section: Physical Analysismentioning
confidence: 58%
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“…The initial designs in the literature lacked mechanisms to trap the EMWs inside the structure and, consequently, EMWs were not fully harvested and they achieved a low bandwidth . Confinement of EMWs inside the structure was achieved by introducing a new architecture that is a metal–insulator—metal (MIM) cavity design with patterned top layers . These configurations are based on the cancellation of EMWs that move in the upward and downward directions between two metallic layers.…”
Section: Introductionmentioning
confidence: 99%
“…[6,7] Confinement of EMWs inside the structure was achieved by introducing a new architecture that is a metal-insulator-metal (MIM) cavity design with patterned top layers. [8][9][10][11][12][13][14][15][16][17] These configurations are based on the cancellation of EMWs that move in the upward and downward directions between two metallic layers. However, they necessitate a complex fabrication route due to requiring electron-beam lithography (EBL).…”
mentioning
confidence: 99%