Visible light detectors based on individual ZrSe<sub>3</sub>and HfSe<sub>3</sub>nanobelts

Xiong, Wenhui; Chen, Jin-Qiang; Wu, Xingxin; Zhu, Jun‐Jie

doi:10.1039/c4tc02492c

Cited by 43 publications

(37 citation statements)

References 39 publications

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“…A bandgap energy of roughly 1.2 eV is estimated which agrees reasonably well with the bulk-like value of ~1 eV. 166 with permission. 18 The response time of the TiS3 photodetector was characterized by modulating the intensity of the excitation laser using a mechanical chopper.…”

Section: Optoelectronic Properties and Devicessupporting

confidence: 67%

“…128,170,171 Both materials have been used for visible light photodetection with individual nanobelt devices under illumination with wavelengths of 405 nm, 650 nm and 780 nm, obtaining ON/OFF ratios of 2 and 2.5 for ZrSe3 and HfSe3, respectively. 166 Current-voltage characteristics of the devices fabricated with ZrSe3 in dark conditions and under illumination with different wavelengths are shown in Figure 9(k-i), as well as the absorption spectra as a function of the light wavelength.…”

Section: Optoelectronic Properties and Devicesmentioning

confidence: 99%

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Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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Section: Optoelectronic Properties and Devicessupporting

confidence: 67%

Section: Optoelectronic Properties and Devicesmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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“…10 To elucidate the high reponsibility and distinctive nonlinear photoresponse, we measured field effect transport property of the as-grown GeS nanoribbon. 10 To elucidate the high reponsibility and distinctive nonlinear photoresponse, we measured field effect transport property of the as-grown GeS nanoribbon.…”

Section: Methodsmentioning

confidence: 99%

Synthesis of single-crystalline GeS nanoribbons for high sensitivity visible-light photodetectors

et al. 2015

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Single-crystalline GeS nanoribbons were synthesized by chemical vapor deposition for the first time. Structural characterization revealed that the nanoribbons grow along [011] direction with thickness of 20~50 nm, width of several micrometers and length of hundreds of micrometers. The GeS nanoribbons show a p-type behavior verified from field effect transport measurement. The nanoribbon photodetectors respond to the entire visible incident light with response edge around 750 nm consistent with the band gap absorption of GeS. Strong nonlinear light-intensity-dependent response was observed between the measured illumination intensity from 0.25 to 212 µW/cm 2 . Under 530 nm light illumination, the maximum responsivity and external quantum efficiency are 139.9 A/W and 32730%, respectively. These results indicate that GeS nanoribbons are promising semiconducting nanomaterial for high performance broadband visible-light sensing applications. Single-crystalline GeS nanoribbons were synthesized by chemical vapor deposition for the first time. The nanoribbon photodetectors respond to the entire visible incident light with response edge around 750 nm with high reponsivity, indicating its promising application for high performance broadband visible-light photo-detecting.

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“…The device responds to wavelengths across visible spectrum and present rise/fall time of about 4/9 ms, and a frequency up to 1000 Hz . Photodetector based on ZrS 3 , ZrSe 3 , and HfSe 3 nanobelts have also been reported, Flexible ZrS 3 nanobelt is reported to exhibit good response from ultraviolet (UV) to near‐infrared (NIR) with a photoswitch current ratio (PCR) of 3.5 . By transferring the ZrS 3 nanobelts to SiO 2 /Si substrates, the PCR can be further improved to 210 under 405‐nm light illumination of 5.57 mW/cm 2 at a bias of 1 V .…”

Section: Electronic and Mechanical Properties Of 2d And 1d Tmtcsmentioning

confidence: 99%

Group IVB transition metal trichalcogenides: a new class of 2D layered materials beyond graphene

Dai

Zeng

2016

WIREs Comput Mol Sci

102

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The discovery of graphene, a single atomic layer of carbon in a hexagonal lattice, has invigorated enormous research interests in two-dimensional (2D) layered materials and their one-dimensional (1D) derivatives not only owing to their extraordinary physical and chemical properties but also their high potential for applications in electronic and photonic devices. A weakness of the graphene however is its lack of a bandgap-a prerequisite for building field-effect transistors (FETs). A stream of new 2D layered materials have been developed over the past 5 years, including, among many others, silicene, phosphorene, and transition metal dichalcogenides. Monolayers of many of these 2D materials exhibit a bandgap, either direct or indirect. In 2015, a new class of 2D layered materials, namely, group-IVB transition metal trichalcogenides (TMTCs), has been uncovered. A prototypical representative of this new class of 2D materials is TiS 3 whose monolayer is predicted to possess a direct band gap of about 1 eV [close to that (1.17 eV) of bulk silicon], and relatively high carrier mobility. Isolation of the few-layer TiS 3 sheets and TiS 3 nanoribbons via mechanical exfoliation has been realized in the laboratory in 2015. The modest 1-eV band gap, relatively high carrier mobility, as well as high chemical stability in open air render TiS 3 monolayer a promising 2D material for nanoelectronic and nanophotonic applications. In this study, we give an overview of the emerging area of 2D and 1D TMTC materials and suggest future research directions related to these novel materials.FIGURE 1 | Representative crystal structures of (a) TiS 3 -type and (b) ZrSe 3 -type transition metal trichalcogenides. WIREs Computational Molecular ScienceGroup IVB transition metal trichalcogenides Volume 6,

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Visible light detectors based on individual ZrSe₃and HfSe₃nanobelts

Abstract: ZrSe3 and HfSe3 nanobelts were synthesized using a chemical vapor transport method. Photodetectors based on individual nanobelts of ZrSe3 and HfSe3 were fabricated, which demonstrated a good photoresponse to visible light.

Cited by 43 publications

References 39 publications

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Synthesis of single-crystalline GeS nanoribbons for high sensitivity visible-light photodetectors

Group IVB transition metal trichalcogenides: a new class of 2D layered materials beyond graphene

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Visible light detectors based on individual ZrSe3and HfSe3nanobelts

Abstract: ZrSe3 and HfSe3 nanobelts were synthesized using a chemical vapor transport method. Photodetectors based on individual nanobelts of ZrSe3 and HfSe3 were fabricated, which demonstrated a good photoresponse to visible light.

Cited by 43 publications

References 39 publications

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Synthesis of single-crystalline GeS nanoribbons for high sensitivity visible-light photodetectors

Group IVB transition metal trichalcogenides: a new class of 2D layered materials beyond graphene

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Visible light detectors based on individual ZrSe₃and HfSe₃nanobelts