Visible and infrared luminescence study of Er doped β-Ga2O3and Er3Ga5O12

Nogales, E.; Garcı́a, J.A.; Méndez, B.; Piqueras, J.; Lorenz, K.; Alves, E.

doi:10.1088/0022-3727/41/6/065406

Cited by 33 publications

(26 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Identifying a means to achieve higher Sn dopant activation in lowtemperature ALD-or PLD-deposited films could increase the industrial relevance of Ga2O3:Sn for cost-sensitive applications including field-effect transistors, 4 solar cells, 5-7 gas sensors, 8 and lasers. 9 Determining the chemical states of active and inactive Sn dopants in Ga2O3 is a first and necessary step toward developing intuition and theory to guide thin-film synthesis.…”

Section: Introductionmentioning

confidence: 99%

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

Siah

Brandt

Lim

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga2O3:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga2O3:Sn grown using edge-defined film-fed growth at 1725 °C is compared with amorphous Ga2O3:Sn films deposited at low temperature (<300 °C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga2O3:Sn are present as Sn4+, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga2O3:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga2O3:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.

show abstract

Section: Introductionmentioning

confidence: 99%

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

Siah

Brandt

Lim

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…It has been successfully used for RE doping of wide bandgap semiconductors such as GaN 9 and AlN 10 . In Ga 2 O 3 , ion implantation has recently been used for electrical doping with Si 11 and it has been previously applied by the present authors for the doping and optical functionalization of Ga 2 O 3 NWs with Er, Eu and Gd ions 12,13,14 . In this work, Ga 2 O 3 single crystals were implanted with Eu ions and compared to Ga 2 O 3 NWs implanted in similar conditions 14 .…”

Section: Introductionmentioning

confidence: 99%

Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Lorenz¹,

Peres²,

Felizardo³

et al. 2014

SPIE Proceedings

View full text Add to dashboard Cite

Ga 2 O 3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1×10 13 to 4×10 15 at/cm 2 . The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channeling mode (RBS/C). RBS/C results suggest that implantation causes a mixture of defect clusters and extended defects such as dislocations. Amorphisation starts at the surface for fluences around 1×10 15 at/cm 2 and then proceeds to deeper regions of the sample with increasing fluence. Amorphous regions and defect clusters are efficiently removed during rapid thermal annealing at ~1100 ºC; however, Eu diffuses towards the surface. Nevertheless, Eu ions are optically activated and show cathodoluminescence at room temperature. Results in bulk samples are compared to those in Eu-implanted Ga 2 O 3 nanowires and despite strong similarities in the structural properties differences were found in the optical activation. Furthermore, damage and dopant incorporation studies were performed using the Perturbed Angular Correlation technique, which allows probing the immediate lattice surroundings of an implanted radioactive probe at the atomic level.

show abstract

“…In particular, modification of their luminescence via the inclusion of optically active ions (e.g. Eu, Gd, Er, Cr, Sn,…) opens the way to fabricate devices that emit in different wavelengths within the UV–visible–IR range . Thermal growth of the nanowires in a dopant‐rich atmosphere has been found to be an effective route for doping nanowires with Cr or rare‐earth ions .…”

Section: Introductionmentioning

confidence: 99%

Influence of growth temperature on the morphology and luminescence of Ga₂O₃:Mn nanowires

Gonzalo

Nogales

Méndez

et al. 2014

Physica Status Solidi (a)

View full text Add to dashboard Cite

Mn doped β‐Ga2O3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300–1500 °C. The morphology of the resulting structures has been found to depend on this temperature, as observed in the images obtained with scanning electron microscopy. The structures grown on the sample at 1500 °C are both isolated microrods and interconnected rods. At lower temperatures, 1300 and 1400 °C, nanowires with widths of about 100 nm and stair‐shaped microcrystals were found. Raman analysis demonstrates that both nanowires and microrods present the β‐Ga2O3 crystal structure. In addition, Mn related light emission has been found to depend on the growth temperature. The assessment of luminescence properties have been carried out by cathodoluminescence analysis. The results show an intense orange emission in the nanowires and green emission in the microrods. These bands are associated to the manganese ions incorporated into the gallium oxide crystal lattice.

show abstract

Visible and infrared luminescence study of Er doped β-Ga₂O₃and Er₃Ga₅O₁₂

Abstract: This article has been downloaded from IOPscience. Please scroll down to see the full text article.

Cited by 33 publications

References 25 publications

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Influence of growth temperature on the morphology and luminescence of Ga₂O₃:Mn nanowires

Contact Info

Product

Resources

About

Visible and infrared luminescence study of Er doped β-Ga2O3and Er3Ga5O12

Abstract: This article has been downloaded from IOPscience. Please scroll down to see the full text article.

Cited by 33 publications

References 25 publications

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

Doping of Ga2O3bulk crystals and NWs by ion implantation

Influence of growth temperature on the morphology and luminescence of Ga2O3:Mn nanowires

Contact Info

Product

Resources

About

Visible and infrared luminescence study of Er doped β-Ga₂O₃and Er₃Ga₅O₁₂

Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Influence of growth temperature on the morphology and luminescence of Ga₂O₃:Mn nanowires