Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Abstract

Ga 2 O 3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1×10 13 to 4×10 15 at/cm 2 . The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channeling mode (RBS/C). RBS/C results suggest that implantation causes a mixture of defect clusters and extended defects such as dislocations. Amorphisation starts at the surface for fluences around 1×10 15 at/cm 2 and then proceeds to deeper regions of the sample with increasing fluence. Amorphous regions and defect clusters are efficiently removed during rapid thermal annealing at ~1100 ºC; however, Eu diffuses towards the surface. Nevertheless, Eu ions are optically activated and show cathodoluminescence at room temperature. Results in bulk samples are compared to those in Eu-implanted Ga 2 O 3 nanowires and despite strong similarities in the structural properties differences were found in the optical activation. Furthermore, damage and dopant incorporation studies were performed using the Perturbed Angular Correlation technique, which allows probing the immediate lattice surroundings of an implanted radioactive probe at the atomic level.

In Situ Characterization and Modification of β‐Ga2O3 Flakes Using an Ion Micro‐Probe

“…The successful activation of implanted donor ions as well as optical dopants has already been demonstrated . However, little is known about the processes leading to implantation damage build‐up and its annealing . Furthermore, understanding the interaction of radiation with this material is important to assess its potential for electronics used in radiation environment or even as a radiation detector.…”

Eu Activation inβ-Ga2O3MOVPE Thin Films by Ion Implantation

“…39,[43][44][45] In addition to intrinsic defects, the UV band luminescence in β-Ga 2 O 3 was reported to depend on doping 39,46 as well as implantation and annealing conditions. 26 For wavelengths above 520 nm in Fig. 4c, sharp luminescence lines are well resolved.…”

“…12,24,25 RE implantation is used as an alternative process to overcome the solubility issue, and was successfully achieved for Eu-doped β-Ga 2 O 3 nanowires and bulk single crystal. 26,27 In this work, we explore the Eu implantation and annealing in β-Ga 2 O 3 thin films for their application in efficient red thin film luminescent devices.…”

Ion implantation in β-Ga2O3: Physics and technology

“…As noted in 79 80 , the presence of two damage maxima in the case of GaN is typical of heavy ions (the Eu + used in Ref. 59 also corresponds to the type of heavy ions). Possibly, in the case of GaN and β-Ga 2 O 3 (-201), the drift of point defects in the field of elastic stresses plays a role: the latter grows with increasing ion mass.…”

“…GaN and ZnO 77 78 79 80 81 . The RBS/C method was also used in 59 to study the damage in β-Ga 2 O 3 with (-201) surface orientation upon ion implantation of the rare earth element Eu (atomic mass M = 152). These results are somewhat different compared to 73 .…”