Ion implantation in β-Ga2O3: Physics and technology

Abstract

Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties. The very high breakdown electric field and the figure of merit rivaled only by diamond have tremendous potential for the next generation “green” electronics enabling efficient distribution, use, and conversion of electrical energy. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the status of ion implantation in β-Ga2O3 nowadays is reviewed. Attention is mainly paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defect parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of Ga2O3-based devices, such as metal oxide field-effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

“…Many published review papers regarding β-Ga 2 O 3 single crystals in the literature are roughly categorized as follows: 1) growth and material properties of bulk β-Ga 2 O 3 [168,169,[176][177][178][179][180][181], bulk β-Ga 2 O 3 -based power/photonic devices [8,9,[182][183][184][185] and their combination [1,[186][187][188][189][190].…”

A High‐Speed Photodetector Fabricated with Tungsten‐Doped MoS2 by Ion Implantation

“…[27,28,[36][37][38] However, these methods bring about some inevitable disadvantages, such as uncontrollability, degraded performance, complicated process, harsh doping conditions, and difficulty in large-area preparation.Ion implantation technology has been generally used in industrial semiconductor applications. [39][40][41][42][43] By this method, any elements can be directly implanted into the sample regardless of the solid solubility. [40,43,44] This process is pure and highly repeatable.…”

“…[40,43,44] This process is pure and highly repeatable. [39][40][41]44] However, the ion implantation technique has a etch effect on the surface of the sample, which may change the hydrophilicity of the surface. [40,41,44] Moreover, The implanted ions cannot accurately stay in atomically thin 2D materials due to their high energy.…”

“…[39][40][41]44] However, the ion implantation technique has a etch effect on the surface of the sample, which may change the hydrophilicity of the surface. [40,41,44] Moreover, The implanted ions cannot accurately stay in atomically thin 2D materials due to their high energy. [40,42] Lowering the implantation energy may be an executable way to calm down the doping atoms, but it will cause severe surface etching.…”

Ion-beam modification of metastable gallium oxide polymorphs

“…Ion implantation is a traditional powerful technology for device processing in semiconductor electronics, and has already been extensively employed in the case of the thermodynamically stable β-Ga 2 O 3 phase (see for example Ref. [6][7][8][9] ). However, to the best of our knowledge, there are no similar studies for the α-Ga 2 O 3 .…”