Ion-beam modification of metastable gallium oxide polymorphs

Tetelbaum, D. I.; Nikolskaya, Alena; Королев, Д. С.; Mullagaliev, Timur; Belov, A. I.; Trushin, V. N.; Dudin, Yuri; Nezhdanov, A V; Машин, А. И.; Mikhaylov, A. N.; Pechnikov, A. I.; Scheglov, M. P.; Николаев, В. И.; Gogova, D.

doi:10.1016/j.matlet.2021.130346

Cited by 17 publications

(7 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In its turn, the data on ion-irradiation-induced defect formation in gallium oxide are limited and all the main results concern only the most stable β-phase [19][20][21][22][23]. Initial study on the phase stability and strain accumulation in mixed α/κ(ε)-Ga2O3 phase was recently performed [24]; however systematic investigation of irradiation-induced effects in metastable Ga2O3 polymorphs is missing. At the same time, data on both polytypes of gallium oxide are urgently required.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Titov

Karabeshkin

Struchkov

et al. 2022

Vacuum

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Titov

Karabeshkin

Struchkov

et al. 2022

Vacuum

View full text Add to dashboard Cite

“…In recent days, ultrawide band gap Ga 2 O 3 has been recognized as a prevalent fourth-generation power device material, owing to its excellent intrinsic physical properties such as high dielectric constant, high breakdown field, and high Baliga’s figure of merit . IIIA–VIA oxide family of Ga 2 O 3 is composed of five phases: α, β, ε, δ, and λ , The most popular and highly studied phase in this polymorph is monoclinic β-Ga 2 O 3 with an ultrawide band gap of 4.4–4.8 eV. , Another α-phase with an ultrawide band gap is 5.3 eV larger than the β-phase, and it is the most well-known power semiconductor material due to its superior band gap tuning and multifunctional alloy properties. − The α and β-Ga 2 O 3 have emerged as promising candidates for novel power and optoelectronic devices. ,, …”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Ultrathin Mixed-Phase Ga₂O₃Films Grown on the α-Al₂O₃Substrate via Mist-CVD

et al. 2022

View full text Add to dashboard Cite

Alpha (α)- and beta (β)-phase gallium oxide (Ga2O3), emerging as ultrawide-band gap semiconductors, have been paid a great deal of attention in optoelectronics and high-performance power semiconductor devices owing to their ultrawide band gap ranging from 4.4 to 5.3 eV. The hot-wall mist chemical vapor deposition (mist-CVD) method has been shown to be effective for the growth of pure α- and β-phase Ga2O3 thin films on the α-Al2O3 substrate. However, challenges to preserve their intrinsic properties at a critical growth temperature for robust applications still remain a concern. Here, we report a convenient route to grow a mixed α- and β-phase Ga2O3 ultrathin film on the α-Al2O3 substrate via mist-CVD using a mixture of the gallium precursor and oxygen gas at growth temperatures, ranging from 470 to 700 °C. The influence of growth temperature on the film characteristics was systematically investigated. The results revealed that the as-grown Ga2O3 film possesses a mixed α- and β-phase with an average value of dislocation density of 1010 cm–2 for all growth temperatures, indicating a high lattice mismatch between the film and the substrate. At 600 °C, the ultrathin and smooth Ga2O3 film exhibited a good surface roughness of 1.84 nm and an excellent optical band gap of 5.2 eV. The results here suggest that the mixed α- and β-phase Ga2O3 ultrathin film can have great potential in developing future high-power electronic devices.

show abstract

“…For example, Ander et al have detected κ phase in the β-Ga 2 O 3 matrix upon heavy ion implants [7], even though the evolution of this process as a function of the implantation parameters has not been explored. More recently, interesting strain accumulation was observed in ion implanted α-Ga 2 O 3 [8] and β-Ga 2 O 3 [9]. However, the systematic understanding of the disorder-induced ordering in Ga 2 O 3 polymorphs was missing in literature.…”

mentioning

confidence: 99%

Disorder-Induced Ordering in Gallium Oxide Polymorphs

et al. 2022

View full text Add to dashboard Cite

Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure and strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization may be prominently suppressed by the monoclinic to orthorhombic phase transition. Utilizing this discovery, a highly oriented single-phase orthorhombic film on the top of the monoclinic gallium oxide substrate was fabricated. Exploring this system, a novel mode of the lateral polymorphic regrowth, not previously observed in solids, was detected. In combination, these data envisage a new direction of research on polymorphs in Ga 2 O 3 and, potentially, for similar polymorphic families in other materials.

show abstract

Ion-beam modification of metastable gallium oxide polymorphs

Cited by 17 publications

References 26 publications

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Temperature Dependence of Ultrathin Mixed-Phase Ga₂O₃Films Grown on the α-Al₂O₃Substrate via Mist-CVD

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Contact Info

Product

Resources

About

Ion-beam modification of metastable gallium oxide polymorphs

Cited by 17 publications

References 26 publications

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3Films Grown on the α-Al2O3Substrate via Mist-CVD

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Contact Info

Product

Resources

About

Temperature Dependence of Ultrathin Mixed-Phase Ga₂O₃Films Grown on the α-Al₂O₃Substrate via Mist-CVD