Virtual prototype and GaN HEMT based high frequency LLC converter design

Xiao, Long; Wu, Liang; Zhao, Jun; Chen, Guozhu

doi:10.1049/joe.2019.0081

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…Considering that large Lds also causes large turn-on and turn-off overvoltage as in [8], [21], [24], [25], thus Lds should be controlled as small as possible by optimal PCB layout and routing of power loop at the very beginning of power converter design.…”

Section: Optimal Design Of Power Loop Stray Inductancementioning

confidence: 99%

“…The first type is trying to eliminate the intensity of exciting source that induces gate crosstalk voltage, among which the simplest way is to slow down the turn-on speed of GaN HEMT with large turn-on resistance, but it will increase the overlap loss during the turn-on transient [4]- [7]. By contrast, minimizing the power loop stray inductance by optimized layout and routing or deliberately designed snubber circuit seems more feasible [8]- [10]. Based on the mechanism analysis of crosstalk, the second type of false turn-on suppression method focuses on minimizing the impedance of gate turn-off loop [10]- [13].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis and Suppression of High Speed Dv/Dt Induced False Turn-on in GaN HEMT Phase-Leg Topology

Xiao

Zhao

et al. 2021

IEEE Access

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Gallium nitride high electron mobility transistor (GaN HEMT) is liable to gate false turn-on problem when the gate crosstalk voltage exceeds its threshold voltage in the widely adopted phase-leg topology due to its low threshold voltage and high switching speed. Without considering the gate loop stray inductance, gate internal resistance, nonlinearity of parasitic capacitances and power loop stray parameters, traditional false turn-on analytical method is insufficient to support accurate analysis. And it has been found that GaN HEMT gate-source parasitic capacitance Cgs previously assumed constant is otherwise highly nonlinear and has strong impacts on the gate crosstalk voltage. This paper has measured Cgs by vector network analyzer and constructed an accurate nonlinear model of Cgs, based on which an accurate GaN HEMT behavior model is further fulfilled. The accuracy of the proposed behavior model has been verified by large amounts of experiment results. The proposed GaN HEMT model is used to accurately calculate gate crosstalk voltage and switching losses. Besides, false turn-on induced extra loss has been calculated and is adopted as a criterion to evaluate the severity of false turn-on and optimal design method for false turn-on suppression has been detailed further.

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Section: Optimal Design Of Power Loop Stray Inductancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis and Suppression of High Speed Dv/Dt Induced False Turn-on in GaN HEMT Phase-Leg Topology

Xiao

Zhao

et al. 2021

IEEE Access

Self Cite

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“…The GaN device has a small on-voltage threshold range, fast switching, no reverse recovery loss, low on-resistance, and good high-frequency characteristics, and is able to switch voltage of hundreds of volts in a few nanoseconds [55][56][57] , which can replace siliconbased equipment even in high-frequency conditions of over 1 million Hz.…”

Section: The Future Evolution Of the Llc Resonant Convertermentioning

confidence: 99%

LLC resonant converter topologies and industrial applications — A review

Zeng

Zhang

et al. 2020

Chin. J. Electr. Eng.

117

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Owing to the advantages of high efficiency, high energy density, electrical isolation, low electromagnetic interference (EMI) and harmonic pollution, magnetic integration, wide output ranges, low voltage stress, and high operation frequency, the LLC resonant converters are widely used in various sectors of the electronics-based industries. The history and development of the LLC resonant converters are presented, their advantages are analyzed, three of the most popular LLC resonant converter topologies with detailed assessments of their strengths and drawbacks are elaborated. Furthermore, an important piece of research on the industrial applications of the LLC resonant converters is conducted, mainly including electric vehicle (EV) charging, photovoltaic systems, and light emitting diode (LED) lighting drivers and liquid crystal display (LCD) TV power supplies. Finally, the future evolution of the LLC resonant converter technology is discussed.

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