Violet and blue-green luminescence from Ti-doped ZnO films deposited by RF reactive magnetron sputtering

Chen, Haixia; Ding, Jijun; Ma, Shenglin

doi:10.1016/j.spmi.2010.12.005

Cited by 29 publications

(10 citation statements)

References 23 publications

(24 reference statements)

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“…The blue band at 420-445 nm, which is related with interstitial Zn defect emission, has been described in detail elsewhere [17,18]. It has been shown that the band gap decreases with the increase of sputtering power.…”

Section: Resultsmentioning

confidence: 86%

Optical properties of Ti-doped ZnO films synthesized via magnetron sputtering

Chen

Ding

Shi

et al. 2012

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 86%

Optical properties of Ti-doped ZnO films synthesized via magnetron sputtering

Chen

Ding

Shi

et al. 2012

Journal of Alloys and Compounds

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“…No phases related to TiO 2 or Zn 2 TiO 4 are detected in the scanning range. Usually, the [002] direction, i.e., the c -axis, is the preferential orientation commonly occurring in pure ZnO films and doped ZnO films prepared by other fabrication techniques such as sol–gel, CVD, and sputtering [10]. However, in the current samples, the (100) peak gradually becomes dominant and the (002) peak turns to be weaker as Ti doping concentration increases.…”

Section: Resultsmentioning

confidence: 94%

“…It was found that the rms roughness value of the films except for the sample with N = 1 is in the range of 1.65 to 1.80 nm. The surfaces of these films are evidently smoother than those deposited by RF reactive magnetron sputtering [10]. It highlights the potential use of TZO films made by ALD as TCO, where precise control over film uniformity and smoothness is required.…”

Section: Resultsmentioning

confidence: 99%

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Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

Geng

et al. 2013

Nanoscale Res Lett

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High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was confirmed by comparing the thicknesses measured by spectroscopic ellipsometry with the expected. It was also found that the locations of the (100) diffraction peaks shift towards lower diffraction angles as Ti concentration increased. For all samples, optical transmittance over 80% was obtained in the visible region. The sample with ALD cycle ratio of ZnO/TiO2 being 20 had the lowest resistivity of 8.874 × 10−4 Ω cm. In addition, carrier concentration of the prepared films underwent an evident increase and then decreased with the increase of Ti doping concentration.

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“…Recently, much more attention has been paid to explore transition metal (TM) ions doped materials' uses in photonic applications [1][2][3][4][5]. Among the TM ions, Cr 3+ and Ti 3+ doped aAl 2 O 3 materials are the most important laser materials, possessing excellent luminescent properties [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%