Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

Ye, Zhiyuan; Lu, Hong‐Liang; Geng, Yanquan; Gu, Yanfeng; Xie, Zhicheng; Zhang, Yuan; Sun, Qizhen; Ding, Shi‐Jin; Zhang, David Wei

doi:10.1186/1556-276x-8-108

Cited by 96 publications

(47 citation statements)

References 23 publications

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“…Among the potential candidates, hafnium silicate was chosen as the first generation of high- k dielectrics for its high dielectric constant and excellent thermal stability [8,9]. Compared to other deposition methods used for hafnium silicate film fabrication, atomic layer deposition (ALD) has the advantages of precise film thickness and stoichiometry control, which are of great significance to optimize the material especially for the shrinking devices [10-15]. …”

Section: Introductionmentioning

confidence: 99%

Optical properties and bandgap evolution of ALD HfSiOx films

et al. 2015

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Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 eV, and they were investigated systematically based on the Gaussian dispersion model. Experimental results show that optical constants and bandgap of the hafnium silicate films can be tuned by the film composition, and a nonlinear change behavior of bandgap with SiO2 fraction was observed. This phenomenon mainly originates from the intermixture of d-state electrons in HfO2 and Si-O antibonding states in SiO2.

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Section: Introductionmentioning

confidence: 99%

Optical properties and bandgap evolution of ALD HfSiOx films

et al. 2015

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“…For comparison ITO typically has 1.19 × 10 −2 Ω −1 [46]. The results of the current study are also promising compared to other doped ZnO films deposited by ALD, such as 100 nm Al-doped ZnO ( F TC = 0.10 × 10 −2 Ω −1 ) [47], 180 nm In-doped ZnO ( F TC = 0.12 × 10 −2 Ω −1 ) [48], 100 nm Ti-doped ZnO ( F TC = 0.12 × 10 −2 Ω −1 ) [49] and 200 nm Hf-doped ZnO ( F TC = 0.36 × 10 −2 Ω −1 ) [14]. …”

Section: Resultsmentioning

confidence: 99%

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

et al. 2015

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Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10−4 Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin oxide with lower cost, earth abundant materials. In the current study, we dope Zr into thin ZnO films grown by atomic layer deposition (ALD) to target properties of an efficient TCO. The effects of doping (0–10 at.% Zr) were investigated for ~100 nm thick films and the effect of thickness on the properties was investigated for 50–250 nm thick films. The addition of Zr4+ ions acting as electron donors showed reduced resistivity (1.44 × 10−3 Ω·cm), increased carrier density (3.81 × 1020 cm−3), and increased optical gap (3.5 eV) with 4.8 at.% doping. The increase of film thickness to 250 nm reduced the electron carrier/photon scattering leading to a further reduction of resistivity to 7.5 × 10−4 Ω·cm and an average optical transparency in the visible/near infrared (IR) range up to 91%. The improved n-type properties of ZnO: Zr films are promising for TCO applications after reaching the targets for high carrier density (>1020 cm−3), low resistivity in the order of 10−4 Ω·cm and high optical transparency (≥85%).

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“…As we see, the E g of untreated sample was 1.82 eV and decreased to 1.42 eV after 5 min annealing at 250 °C. The variation of E g indicates the crystallinity of Sb 2 S 3 has been improved with an order-disorder transformation accompanied by the removal of excessive S element [26]. For the selenized sample, the E g decreased to a minimum of 1.09 eV, which is very close to crystalline silicon.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of Water-Soluble Antimony Sulfide Quantum Dots and Their Photoelectric Properties

2018

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Antimony sulfide (Sb2S3) has been applied in photoelectric devices for a long time. However, there was lack of information about Sb2S3 quantum dots (QDs) because of the synthesis difficulties. To fill this vacancy, water-soluble Sb2S3 QDs were prepared by hot injection using hexadecyltrimethylammonium bromide (CTAB) and sodium dodecyl sulfate (SDS) mixture as anionic-cationic surfactant, alkanol amide (DEA) as stabilizer, and ethylenediaminetetraacetic acid (EDTA) as dispersant. Photoelectric properties including absorbing and emission were characterized by UV-Vis-IR spectrophotometer and photoluminescence (PL) spectroscopic technique. An intensive PL emission at 880 nm was found, indicating Sb2S3 QDs have good prospects in near-infrared LED and near-infrared laser application. Sb2S3 QD thin films were prepared by self-assembly growth and then annealed in argon or selenium vapor. Their band gaps (Egs) were calculated according to transmittance spectra. The Eg of Sb2S3 QD thin film has been found to be tunable from 1.82 to 1.09 eV via annealing or selenylation, demonstrating the good prospects in photovoltaic application.

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Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

Cited by 96 publications

References 23 publications

Optical properties and bandgap evolution of ALD HfSiOx films

Optical properties and bandgap evolution of ALD HfSiOx films

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

Synthesis of Water-Soluble Antimony Sulfide Quantum Dots and Their Photoelectric Properties

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