Vibrational Lifetime of Bond-Center Hydrogen in Crystalline Silicon

Budde, Michael; Lüpke, G.; Cheney, C. Parks; Tolk, N. H.; Feldman, L. C.

doi:10.1103/physrevlett.85.1452

Cited by 91 publications

(79 citation statements)

References 19 publications

(17 reference statements)

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“…However, the multiple vibrational excitation mechanism is temperature dependent as the vibrational lifetime of the local modes of Si-H complexes decreases with increase in temperature [21][22][23], reducing the efficiency of this "vibrational state-ladder climbing" process. Hence our temperature dependence data suggests that secondary electron induced multiple vibrational excitation may be responsible for the observed site changes and dissociation of defect associated…”

Section: Secondary Electron Induced Vibrational Excitation and Ionizamentioning

confidence: 99%

Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

et al. 2011

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We report in-situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect associated Si-H complexes were prepared by low temperature proton implantation in silicon followed by room temperature annealing. As a result of subsequent low temperature 3 He ion irradiation, we observed 1) ion induced dissociation of Si-H complexes; 2) a notable difference in the dissociation rate of interstitial type and vacancy type defects; and unexpectedly, 3) the growth of bond-center hydrogen (BCH) which had previously been observed only in association with low-temperature proton implantation. These findings provide new insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.

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Section: Secondary Electron Induced Vibrational Excitation and Ionizamentioning

confidence: 99%

Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

et al. 2011

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“…Linear dynamics using pump-probe techniques was applied to amide-I absorption at 5 to 8 mm in proteins 15) , and to hydrogen defects in silicon at 3 mm 16,17) . In the following we expand on some of these applications of a high power, high repetition rate IR FEL.…”

Section: Applicationsmentioning

confidence: 99%

The Jefferson Lab Free Electron Laser Program

Neil¹,

Benson²,

Biallas³

et al. 2002

Jpn. J. Appl. Phys.

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A Free Electron Laser (FEL) called the IR Demo is operational as a user facility at Thomas Jefferson National Accelerator Facility in Newport News, Virginia, USA. It utilizes a 48 MeV superconducting accelerator that not only accelerates the beam but also recovers about 80% of the electron−beam power that remains after the FEL interaction. Utilizing this recirculation loop the machine has recovered cw average currents up to 5 mA, and has lased cw above 2 kW output at 3.1 microns. It is capable of output in the 1 to 6 micron range and can produce ~0.7 ps pulses in a continuous train at ~75 MHz. This pulse length has been shown to be nearly optimal for deposition of energy in materials at the surface. Upgrades under construction will extend operation beyond 10 kW average power in the near IR and produce multi-kilowatt levels of power from 0.3 to 25 microns. This talk will cover the performance measurements of this groundbreaking laser, scaling in near-term planned upgrades, and highlight some of the user activities at the facility.

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“…In fact, the first reported vibrational photon echo was for the CO stretching mode of tungsten hexacarbonyl near 1960 cm À1 in experiments performed using the Stanford FEL [1]. Since then a multitude of investigations have been performed, including relaxation dynamics of S-H(D) stretch modes in amorphous As 2 S 3 [2], investigations of hydrogen local modes in crystalline silicon [3] and calcium fluoride [4] to name but a select few.…”

Section: Introductionmentioning

confidence: 98%