Vibrational analysis of single-layered silicon carbide nanosheets and single-walled silicon carbide nanotubes using nanoscale finite element method

Abstract

A three-dimensional finite element model has been used here to study the vibrational behavior of silicon carbide nanosheets and nanotubes. The bonds of hexagonal lattices of SiC nanosheets have been modeled by structural beam elements, and at the corners, mass elements are placed instead of Si and C atoms. Moreover, molecular dynamics simulations are performed to verify the finite element model. Comparing the results of finite element model and molecular dynamics simulations, it is concluded that the utilized approach can predict the results of molecular dynamics simulations with a reasonable accuracy. It is observed that the atomic structure does not significantly affect the vibrational behavior of nanosheets. Besides, increasing the size of nanosheet results in decreasing the effect of geometry variation. As the aspect ratio of nanotubes increases, the effects of boundary conditions and length diminish so that the frequency envelopes tend to converge.

Overview on the Evaluation of the Elastic Properties of Non-Carbon Nanotubes by Theoretical Approaches

“…The studies reported so far on the dynamic properties of N-CNTs mainly addressed the theoretical analysis of the vibrational behaviour of BNNTs [34,48,57,63,[67][68][69][70][71]98,99] and SiCNTs [100,101].…”

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

“…However, SiC possesses high hardness and chemical inertness which bring many challenges to the manufacture of abrasive-based nano-surface. 9,10 Abrasive machining is one of the most important processes used in manufacturing engineering. 11 Some experimental researches have been conducted in the field of chemical mechanical polishing processes for obtaining ultra-smooth SiC surface.…”

“…[1][2][3][4][5][6] The wide band gap, high limit operating temperature and thermal conductivity, high breakdown electric field strength, excellent oxidation and neutron irradiation resistance, corrosion and wear resistance, which makes SiC becoming promising material in harsh environment. [7][8][9][10] The thermal expansion coefficient and lattice constant of single-crystal SiC are similar to those of gallium nitride (GaN), which effectively solves the problem of low lattice matching between substrate materials and gallium nitride.…”