2003
DOI: 10.1049/el:20031190
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Via-walled cavities as vertical transitions in multilayer millimetre-wave circuits

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Cited by 12 publications
(5 citation statements)
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“…Vertical transitions can achieve the signal interconnection between multilayer structures. Usually, vertical transition can be achieved in 3 ways such as via‐connection vertical transitions, cavity‐coupled vertical transitions, , and aperture‐ or slot‐coupled vertical transitions , wherein the aperture‐ or slot‐coupled vertical transitions gain more attention because of easy fabrication and low cost. However, the reported microstrip vertical transitions are all single‐ended, and no balanced microstrip‐to‐microstrip vertical transition has been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Vertical transitions can achieve the signal interconnection between multilayer structures. Usually, vertical transition can be achieved in 3 ways such as via‐connection vertical transitions, cavity‐coupled vertical transitions, , and aperture‐ or slot‐coupled vertical transitions , wherein the aperture‐ or slot‐coupled vertical transitions gain more attention because of easy fabrication and low cost. However, the reported microstrip vertical transitions are all single‐ended, and no balanced microstrip‐to‐microstrip vertical transition has been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Aperturecoupled transition [6,7] can change the shape of an aperture or a microstrip terminal and obtain improved bandwidth, but it cannot be used as an appropriate design method. Finally, cavity-coupled transitions [8,9] have been presented to transfer signals through several layers with a relatively narrower bandwidth.…”
Section: Introductionmentioning
confidence: 99%
“…Both the slot coupled structure and the via-probe transition structure can hardly perform well in millimetre wave band when fabricated with microstrip substrate for the affecting of parasitical inductive and capacitive. In [7], a SIW rectangular cavity was employed to couple energy from top layer to bottom layer without any auxiliary components in middle layers. The Via-walled cavity structure might perform well in higher frequency band for its high Q-value cavity and low parasitical inductive and capacitive structure.…”
Section: Introductionmentioning
confidence: 99%
“…The Via-walled cavity structure might perform well in higher frequency band for its high Q-value cavity and low parasitical inductive and capacitive structure. However, flexibility of the structure is not good enough, planar transmission lines in different layers of the transition in [7] can not spread out with arbitrary directions for the rectangular cavitys non-revolutioninvariant structure, which restrict the flexibility of application. In this paper, we present a novel transition which based on SICC (Substrate Integrated Circular Cavities) structure.…”
Section: Introductionmentioning
confidence: 99%