2008
DOI: 10.2528/pierm08101305
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Vertical Transition in Multilayer Millimeter Wave Module Using Circular Cavity

Abstract: Abstract-A novel transition structure based on Substrate Integrated Circular Cavity (SICC) is proposed in this paper. The design approach of the transition structure can also be used in other operating frequency. Good performance of flexibility and S-parameters were observed for the new transition structure. Different design tools were used to validate the design method.

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Cited by 3 publications
(1 citation statement)
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“…The vertical transitions described in the literature can be categorised into two main groups: with-via and via-less. The first category is manufactured with technologies in which metalised vias are available [2][3][4][5]. However, in the MCM technology metalised vias in high resistive silicon are expensive and difficult to achieve.…”
mentioning
confidence: 99%
“…The vertical transitions described in the literature can be categorised into two main groups: with-via and via-less. The first category is manufactured with technologies in which metalised vias are available [2][3][4][5]. However, in the MCM technology metalised vias in high resistive silicon are expensive and difficult to achieve.…”
mentioning
confidence: 99%