Via-hole-based vertical GaN light emitting diodes

Jung, Hyunmin; Nam, Gi-Yeon; Choi, Byung-Kyun; Lee, Tae Hee; Kim, Hyunsuk; Jeon, Soo-Kun; Park, Eun-Hyun; Kim, Chang-Tae

doi:10.1063/1.2785110

Cited by 19 publications

(4 citation statements)

References 6 publications

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“…However, using electroplating technology adds an extra process to LED manufacturing because laser lift-off (LLO) technology must be used, causing LED manufacturers have low throughput, low yield, and high cost. Therefore, previous studies have used a laser drilling methods to replace the LLO method in GaN-based LED manufacturing [5,6].…”

Section: Introductionmentioning

confidence: 99%

Connecting plugs of high-powered GaN-based lighting-emitting diodes prepared by electroplating

Wang

Chen

2013

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

Connecting plugs of high-powered GaN-based lighting-emitting diodes prepared by electroplating

Wang

Chen

2013

Materials Science in Semiconductor Processing

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“…In this letter, the through-hole technique, which is widely applied in integrated circuit (IC), was utilized in our vertical structure of GaN-based LED on the Si substrate. A via-hole-based vertical LED structure on the sapphire substrate was reported by Jung et al 11) Because sapphire is an insulating material, and it cannot be etched by dry or wet etching. To form via-holes, the sapphire substrate was punched through using highpower laser drilling technology.…”

Section: Introductionmentioning

confidence: 99%

Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes

Wei

Zhang

Wang

et al. 2010

Jpn. J. Appl. Phys.

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Large reservoirs along rivers regulate downstream flows to generate hydropower but may also store water for irrigation and urban sectors. Reservoir management therefore becomes critical, particularly for transboundary basins, where coordination between riparian countries is needed. Reservoir management is even more important in semiarid regions where downstream water users may be totally reliant on upstream reservoir releases. If the water resources are shared between upstream and downstream countries, potentially opposite interests arise as is the case in the Syrdarya river in Central Asia. In this case study, remote sensing data (radar altimetry and optical imagery) are used to highlight the potential of satellite data to monitor water resources: water height, areal extent and storage variations. New results from 20 years of monitoring using satellites over the Syrdarya basin are presented. The accuracy of satellite data is 0.6 km 3 using a combination of MODIS data and satellite altimetry, and only 0.2 km 3 with Landsat images representing 2-4% of average annual reservoir volume variations in the reservoirs in the Syrdarya basin. With future missions such as Sentinel-3A (S3A), Sentinel-3B (S3B) and surface water and ocean topography (SWOT), significant improvement is expected. The SWOT mission's main payload (a radar interferometer in Ka band) will furthermore provide 2D maps of water height, reservoirs, lakes, rivers and floodplains, with a temporal resolution of 21 days. At the global scale, the SWOT mission will cover reservoirs with areal extents greater than 250 × 250 m with 20 cm accuracy.

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“…17,18 However, the laser lift-off, one of the critical fabrication processes in vertical structure LED, has been proven to have low yield due to strain-induced cracks. 15,[19][20][21] To overcome these problems, flip-chip technology is brought up as a practical approach to satisfy heat dissipation of LEDs. [22][23][24][25][26][27] The formation of p-type electrode with low specific contact resistance and high reflectance is especially crucial for the realization of highly efficient flip-chip LEDs (FCLEDs).…”

mentioning

confidence: 99%

Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes

Liu

et al. 2018

ECS J. Solid State Sci. Technol.

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Heat removal and current spreading uniformity are important for the realization of highly efficient light-emitting diodes (LEDs).Here we have compared two types of GaN-based flip-chip LEDs (FCLEDs) with highly reflective indium-tin oxide (ITO)/distributed Bragg reflector (DBR) and Ni/Ag p-type ohmic contacts. The via-based n-type contact structure was implemented to increase the utilization ratio of active region area and improve current spreading over the entire LEDs. Compared with FCLED with Ni/Ag, the FCLED with ITO/DBR shows a 6.3% higher light output power (LOP) at low current density of 31 A/cm 2 (90 mA) due to higher reflectance of ITO/DBR ohmic contact. However, at high injection currents, the Ni/Ag ohmic contact in FCLED alleviates self-heating issue by means of its superior heat dissipation performance. We also found that the less area coverage between ITO and metallization layer have a negative influence on heat dissipation performance of FCLED with ITO/DBR. As a result, the maximum light output power (LOP) of the FCLED with Ni/Ag obtained at 292.8 A/cm 2 is 1.3 times larger than that of FCLED with ITO/DBR obtained at 196.3 A/cm 2 .

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Via-hole-based vertical GaN light emitting diodes

Cited by 19 publications

References 6 publications

Connecting plugs of high-powered GaN-based lighting-emitting diodes prepared by electroplating

Connecting plugs of high-powered GaN-based lighting-emitting diodes prepared by electroplating

Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes

Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes

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