Very small MOSFET's for low-temperature operation

Gaensslen, F.H.; Rideout, V.L.; Walker, E.J.; Walker, John J.

doi:10.1109/t-ed.1977.18712

Cited by 290 publications

(46 citation statements)

References 33 publications

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“…The first approach is to examine Equation (38) in the limit of very large electric fields. This gives limit ID = Wqg( Vcs, VBs) E, n (42) dy where n is determined from the threshold voltage at the drain to be n=C' V -V, -20F C Vsr + Vs + 20,]…”

Section: )mentioning

confidence: 99%

“…because this expression was obtained by letting the electric field become infinite. The saturation voltage can then be determined by setting Equation (41) with V 0 v = VAs.T equal to Equation (42), which, after rearranging gives The second approach is to differentiate Equation (41) with respect to VLS and set it equal to 0. This will identically yield Equation (44).…”

Section: )mentioning

confidence: 99%

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Verify and Extend VLSI Device Models

Leiss¹,

Yang²,

Chatterjee³

et al. 1982

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Section: )mentioning

confidence: 99%

Section: )mentioning

confidence: 99%

Verify and Extend VLSI Device Models

Leiss¹,

Yang²,

Chatterjee³

et al. 1982

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“…Early in the emergence of CMOS, interest was shown in operating CMOS circuits at cryogenic temperatures as a means of improving their performance [2]. Simple studies showed very large improvements in digital circuit switching speed (as much as seven times), and it was also noted that the steepening of the MOS transistor subthreshold slope had the effect of making the transistor into a more ideal digital switch.…”

Section: Introductionmentioning

confidence: 99%

“…Shortly after CMOS circuits appeared on the scene, it was quickly noted that by the simple expedient of "dunking" them in liquid nitrogen (T = −196 • C, which is 77 K) the digital switching speed could be improved by several times-as much as seven times the room temperature switching speed [2]. The basis for this improvement was quite simple; at lower temperatures, the density of thermal acoustic phonons is greatly reduced.…”

Section: Introductionmentioning

confidence: 99%

An evaluation of deep-submicron CMOS design optimized for operation at 77 K

Foty¹

2006

Analog Integr Circ Sig Process

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Using a careful and insightful analysis of the possible benefits of 77 K CMOS in submicron technology from a decade ago [1], the development of 77 K CMOS in presentday deep submicron technology is evaluated. It is found that the basic principles from the earlier study-that the real benefit of 77 K CMOS operation is the ability to provide "pure" scaling of the threshold voltage and thus to allow aggressive super-scaling of MOS transistor dimensions-not only holds in present-day CMOS processes, but is even more important in that regard. A detailed analysis of CMOS technology, digital circuit behavior, and analog circuit behavior is provided. It is noted that not only does properly-designed 77 K CMOS technology provide opportunities; it also addresses some of the most fundamental difficulties facing CMOS technology and CMOS circuit design.

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“…Model: As demonstrated elsewhere [6,7], there is no freezeout in the channel region of the MOSFET operating in strong inversion at cryogenic temperatures. However, freezeout exists in the neutral ('bulk') region and affects MOSFET characteristics, especially in the weak inversion regime.…”

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confidence: 97%

Design applications of compact MOSFET model for extended temperature range (60–400K)

et al. 2011

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An advanced MOSFET model for the 60 -400 K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.Introduction: Two industry standard MOSFET models, BSIM [1] and PSP [2], are developed for the traditional temperature range (233-400 K) and have no real capabilities below 200 K. Hence they are not directly applicable to circuit simulations in the extended temperature range which may include cryogenic temperatures. Recent progress in the formulation of the surface-potential-based approach [3, 4] enables simulations for the 60 -400 K range that retain all the capabilities of the original PSP model including an extremely accurate and physical description of device characteristics and secondary effects in all regions of operation. This in turn supports the design of mixed signal circuits intended to operate in a wide temperature range [5]. This Letter contains the first description of the new model and its design applications.

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Very small MOSFET's for low-temperature operation

Cited by 290 publications

References 33 publications

Verify and Extend VLSI Device Models

Verify and Extend VLSI Device Models

An evaluation of deep-submicron CMOS design optimized for operation at 77 K

Design applications of compact MOSFET model for extended temperature range (60–400K)

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