VERY RAPID GROWTH OF HIGH QUALITY GaAs, InP AND RELATED III-V COMPOUNDS

Abstract

Application of the hydride growth process at overall pressures below 5x103 Pa yields very high rates of deposition for binary (GaAs, InP) and ternary (GaInAs, GaAsP) III-V semiconductor films. It is proposed that at these conditions the hydrides AsH3 and PH3 reach the substrate surface undecomposed and react directly with the group III chloride (GaCl, InCl). The rates can be convenently adjusted over a wide range by varying the reactant pressures. Films of excellent morphology with low background doping, high electron mobilities and well resolved PL spectra were obtained

10-Fold-Stack Multilayer-Grown Nanomembrane GaAs Solar Cells

“…Gallium arsenide (GaAs) is one of the most promising materials candidates for high efficiency photovoltaic systems owing to a number of unique advantages, including direct bandgap, ideal absorption band against solar spectrum, and superior photophysical properties, as well as established growth technology for single-crystalline materials. − While GaAs-based single-junction solar cells currently have the record-high efficiency and promise extremely low power-to-weight ratio, the prohibitive cost of preparing device-quality epitaxial materials has prevented them from being widely deployed in residential photovoltaic applications where silicon-based solar cells are currently predominant. , Given such compelling advantages, tremendous research efforts have been devoted over the past decades for identifying alternative routes to economically prepare high quality GaAs solar cells. − Among various approaches pursued including epitaxial liftoff (ELO) , and hydride vapor phase epitaxy (HVPE), − growing multiple layers of solar cells on a single growth substrate, in conjunction with sequential liftoff via transfer printing, has been of special interest due to its ability to circumvent critical limitations of conventional ELO, where an excessively large number (e.g., >500) of substrate reuses is mandatory to attain cost-competitiveness . Critically, multilayer epitaxy has potential to significantly lower the cost of materials growth by aggressively reducing the contribution from equipment depreciation; the time-consuming load–unload procedure is performed just once for many device growths, which is not achievable in conventional ELO or HVPE.…”

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

“…Growth rates of up to 300 μm h −1 for some binary materials and up to 170 μm h −1 for some of their ternaries have been, indeed, recently [ 37 ] or even earlier [ 38 ] reported. However, reporting a high growth rate without providing the growth duration is, usually, an indication for short‐time, thin‐layer growths.…”

Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy

“…r InCl ϭ r P4 ϭ r H2 ϭ r HCl ϭ r [11] It is seen that in the high-temperature region, the growth rates for orientations almost coincide with each other since where r is the measured growth rate of InP. For comparison, our experimental values are also plotted.…”