Very Long and Large-Area RF Plasma Productions by Odd Surface Waves for Online Mass Production of Amorphous Silicon Solar Cells or Mirrors

Nonaka, Shigehiko

doi:10.1143/jjap.34.1711

Cited by 1 publication

(2 citation statements)

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“…where n e (r) is the time-independent electron density as a function of position r, ν e is the effective angular collision frequency for electrons and |E e (r)| is the effective position dependent electric field. Equation (1) shows that there exists a hysteresis in the absorbed microwave power needed to ignite or maintain a plasma. When starting a plasma n e (r) is extremely small, requiring very high electric fields to achieve a reasonable power absorption.…”

Section: Microwave Absorptionmentioning

confidence: 99%

“…They play a crucial role in the microstructuring of silicon wafers with steadily increasing diameters, or of flat panel displays. They are of increasing interest for large area coating of solar cells [1] and compact discs. Long linear plasma sources are needed for the coating of architectural glass, foils for audiovisual cassettes, and metal sheets, or for plasma polymerization used for the modification of webs, membranes and textile products.…”

Section: Introductionmentioning

confidence: 99%

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Scaling of microwave slot antenna (SLAN): a concept for efficient plasma generation

Korzec

Werner

Winter

et al. 1996

Plasma Sources Sci. Technol.

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In slot antenna (SLAN) type plasma sources the microwave power is coupled from an annual waveguide (ring cavity) through equidistantly positioned resonant coupling slots into the plasma chamber made of quartz. The symmetrical power distribution and the surface wave at the plasma-quartz interface allows large-area plasma generation. Three plasma sources with 4, 16 and 66 cm quartz tube diameter (ring cavities with 4, 10 and 30 coupling slots respectively) are compared. The ECR versions of them are also considered. The ignition performance and operation pressure range are presented. Plasma parameters (ion concentration, electron temperature) and their radial and axial distributions are shown. The computation tools used for the design of sources with different dimensions are described. The scaling rules and limitations of up-scaling are discussed. These are plasma inhomogeneity due to diffusion and recombination processes, thermal load of the microwave components, and thermal and mechanical load of the plasma chamber and substrates. The up-scaled discharge architecture for remote processing, suppressing the direct microwave heating and ion bombardment is proposed.

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Section: Microwave Absorptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%