Very large bandwidth strained MQW DFB laser at 1.3 μm

Chen, T.R.; Ungar, J.; Yeh, X.L.; Bar‐Chaim, N.

doi:10.1109/68.384509

Cited by 10 publications

(4 citation statements)

References 13 publications

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“…There is a performance tradeoff between short and long laser cavities. The long cavity favors high-power operation, while the short cavity favors the speed [14]. Care needs to be taken to incorporate the ESD robustness when designing the high-speed laser.…”

Section: (C) Cavity Length Dependencementioning

confidence: 99%

Size Effect on ESD Threshold and Degradation Behavior of InP Buried Heterostructure Semiconductor Lasers

Huang¹,

Lu²

2009

TOAPJ

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Optoelectronic components such as laser diodes and light-emitting diodes are vulnerable to electrostatic discharge (ESD) and electrical overstress (EOS). In this paper, we extensively study the size effect on ESD performance of buried heterostructure (BH) distributed feedback (DFB) InGaAsP/InP lasers. We show that the ESD threshold and degradation behavior of BH lasers are correlated with the cavity length and contact width. The ESD threshold increases linearly with increasing cavity length and contact width. For the ESD degradation behavior, the occurrence frequency of hard degradation, a behavior characterized with a sudden jump in threshold current during the ESD voltage ramp, decreases with increasing cavity length. We also show that the dielectric layer is influential in ESD performance. The physical mechanisms of the ESD behavior will also be discussed.

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Section: (C) Cavity Length Dependencementioning

confidence: 99%

Size Effect on ESD Threshold and Degradation Behavior of InP Buried Heterostructure Semiconductor Lasers

Huang¹,

Lu²

2009

TOAPJ

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“…Previously, many literatures have reported the high speed directly modulated lasers in many material systems including InGaAsP, InGaAs/InGaAlAs/InP, and InGaAs/GaAs [1,2] . But the low cost criteria have not been addressed yet.…”

mentioning

confidence: 99%

“…But the low cost criteria have not been addressed yet. Many reported designs with an InGaAsP active region favor a buried heterostructure or more exotic structures [1,3,4] . The extra growth and etch steps associated with these complicated structures increase the device cost and decrease its yield.…”

mentioning

confidence: 99%

高速宽温度范围无致冷1.3μm DFB半导体激光器

et al. 2009

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A 1.3-µm wavelength vertical-mesa ridge waveguide mulitple-quantum-well (MQW) distributed feedback (DFB) laser with high directly modulated bandwidth and wide operation temperature range is reported. With the optimization of the strained-layer MQWs in the active region, the surrounding graded-index separated-confinement-heterostructure waveguide layers, together with the optimization of the detuning and coupling coefficient of the DFB grating, high directly modulation bandwidth of 16 GHz at room temperature and wide working temperature range from −40 to 85 • C are obtained. The mean time to failure (MTTF) is estimated to be over 2×10 6 h. The device is suitable as light source of high-bit-rate optical transmitters with small size and reduced cost.

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“…Lasers DFB estão comercialmente disponíveis com eficiências que variam entre 0,1 a 0,32 W/A [58], sendo que foi demonstrado experimentalmente eficiências acima de 0,4 W/A em 1310 nm [63]. Já os VCSELs oferecem alta eficiência de conversão devido à redução da região ativa, o que permite a criação de diodos com baixa corrente de alimentação [35,55].…”

Section: Modulação Diretaunclassified

Implementação e análise de desempenho de sistemas rádio sobre fibra em redes WSN e Wi-Fi

Lona¹,

Hernandez-Figueroa²

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Primeiramente, agradeço a Deus por todas as oportunidades de ensinamento em minha vida. A sabedoria é um grande presente e devemos sempre ser gratos pelos desafios e superações que vivemos diariamente.Agradeço a minha família, minha mãe Carmen e meu pai Flávio, que sempre me educaram com muito carinho e me ensinaram os verdadeiros valores da vida.Agradeço a minha namorada, Juliana, por todo o apoio, carinho e atenção nesta fase tão importante de nossas vidas. Ju, você é um anjo que está na minha vida e sempre irei te amar e respeitar. Te amo! Agradeço ao Prof. Hugo Enrique Hernández Figueroa pela oportunidade de trabalhar com os renomados grupos do FOTONICOM e CePOF na elaboração de diversas pesquisas, principalmente com as fibras de cristais fotônicos. Forte abraço Prof. Hugo!

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Very large bandwidth strained MQW DFB laser at 1.3 μm

Cited by 10 publications

References 13 publications

Size Effect on ESD Threshold and Degradation Behavior of InP Buried Heterostructure Semiconductor Lasers

Size Effect on ESD Threshold and Degradation Behavior of InP Buried Heterostructure Semiconductor Lasers

高速宽温度范围无致冷1.3μm DFB半导体激光器

Implementação e análise de desempenho de sistemas rádio sobre fibra em redes WSN e Wi-Fi

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