Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm

Nguyen, Binh Minh; Hoffman, Darin; Wei, Yajun; Delaunay, Pierre Yves; Hood, Andrew; Razeghi, Manijeh

doi:10.1063/1.2746943

Cited by 111 publications

(40 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Similar results on the diffusion length and quantum efficiency in long-wavelength infrared InAs/GaSb SL photodiodes with a 50% cut-off around 11 lm have been published by Nguyen et al [4].…”

Section: Quantum Efficiency Of Inas/gasb Superlattice Photodiodessupporting

confidence: 75%

InAs/GaSb superlattices for advanced infrared focal plane arrays

Rehm

Walther

Schmitz

et al. 2009

Infrared Physics & Technology

View full text Add to dashboard Cite

Section: Quantum Efficiency Of Inas/gasb Superlattice Photodiodessupporting

confidence: 75%

InAs/GaSb superlattices for advanced infrared focal plane arrays

Rehm

Walther

Schmitz

et al. 2009

Infrared Physics & Technology

View full text Add to dashboard Cite

“…An emerging interband technology is type II strained layer superlattices (SLSs) [4,5] based on the InAs-(In-Ga)Sb material systems. These detectors are promising alternatives for HgCdTe-based detectors because of high quantum efficiency and low dark currents [6]. Excellent comparisons of the technologies mentioned above can be found in [1,[7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Review of current progress in quantum dot infrared photodetectors

Barve

Lee

Noh

et al. 2009

Laser & Photonics Reviews

120

View full text Add to dashboard Cite

Quantum dot infrared photodetectors (QDIPs) have made significant progress after their early demonstration about a decade ago. The progress made by QDIP technology over the last few years is reviewed and compared with quantum well infrared photodetectors (QWIPs). It is shown that the performance of QDIPs has significantly improved using novel architectures such as dots-in-a-well designs, and large-format (1 K 1 K) focal plane arrays have been realized. However, even though there are significant reports of performance parameters better than QWIPs from single-pixel devices, QDIP-based focal plane arrays are still a factor of 3-5 worse in terms of noise equivalent temperature difference. The reasons for the performance gap and the key scientific and technological challenges that need to be addressed to achieve the full potential of QD-based technology are discussed.Three-dimensional rendition of quantum dots in a well structure.

show abstract

“…3 It was also reported that dark-current density is insensitive to device thickness when operated near tunneling regime. 4 The increase in dark-current density with absorber thickness is an issue in general, however, and should be addressed.…”

Section: Dark Current Density and Rule 07mentioning

confidence: 99%

Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

et al. 2010

View full text Add to dashboard Cite

The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large-format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium-format pixel, co-registered, dual-band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high-quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders-of-magnitude reduction in detector dark-current density and substantial increase in quantum efficiency, as well as the demonstration of good-quality long-wavelength infrared FPAs.Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation. In addition, challenges in long-term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA), this 4-year program sets its goal to establish U.S. industry capability of producing high-quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III-V industry resources and taking advantage of years of valuable experiences amassed by the HgCdTe FPA industry. By end of the program span, three sets of FPAs will be demonstrated-a small-format long-wave FPA, a large-format long-wave FPA, and a medium-format dual-band FPA at long-wave and mid-wave infrared.

show abstract

Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm

Cited by 111 publications

References 12 publications

InAs/GaSb superlattices for advanced infrared focal plane arrays

InAs/GaSb superlattices for advanced infrared focal plane arrays

Review of current progress in quantum dot infrared photodetectors

Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

Contact Info

Product

Resources

About