Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers

Bettiati, M.; Starck, C.; Laruelle, François; Cargemel, V.; Pagnod, P.; Garabédian, P.; Keller, D. V.; Ughetto, G.; Bertreux, J.-C.; Raymond, Luke; Gelly, G.; Capella, R.-M.

doi:10.1117/12.643781

Cited by 19 publications

(9 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Device structure and cw operation properties have been described in detail in earlier reports [6,7]. The devices investigated are based on a 980 nm emitting InGaAs/AlGaAs single quantum well (QW) structure with an asymmetric waveguide.…”

Section: Devicesmentioning

confidence: 99%

Internal degradation of 980nm emitting single-spatial-mode lasers during ultrahigh power operation

et al. 2014

View full text Add to dashboard Cite

Internal degradation of 980 nm emitting single-spatial-mode diode lasers during ultrahigh power operation is investigated for pulsed operation (2 µJ, 20 W). Analysis of the evolution of the emission nearfield with picosecond time resolution enables the observation of the transition from single-to multi-spatial-mode operation at elevated emission powers. Moreover, internal degradation events and subsequent defect propagation processes are in situ monitored by thermal imaging. Subsequently, these devices are opened and defect pattern are inspected by cathodo-and photoluminescence spectroscopy. The results complete earlier findings obtained with broad-area lasers and help to establish models covering defect generation and propagation in edge-emitting devices in general.

show abstract

Section: Devicesmentioning

confidence: 99%

Internal degradation of 980nm emitting single-spatial-mode lasers during ultrahigh power operation

et al. 2014

View full text Add to dashboard Cite

show abstract

“…The InGaAs LD has lower thresholds due to higher optical gain ( g o ∼1800 cm −1 ) due to lower density of states and narrower broadening that translates into higher stimulated efficiency. Lastly, the extraction efficiency is much higher for the InGaAs LD because the optical losses are much lower at ∼0.6–0.7 cm −1 . These are all areas where the blue III‐nitride LD needs to improve.…”

Section: State‐of‐the‐art Power‐conversion Efficiencies: Blue Ldsmentioning

confidence: 99%

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Wierer

Tsao

Sizov

2013

Laser & Photonics Reviews

488

244

View full text Add to dashboard Cite

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.

show abstract

“…[8]. The devices are anti-reflection (≈3%) and high-reflection (≈99%) coated at front and rear facets, respectively.…”

Section: Expreriment and Methodologymentioning

confidence: 99%

Short-wavelength infrared defect emission as probe for degradation effects in diode lasers

Hempel

Tomm

Yue

et al. 2015

Novel in-Plane Semiconductor Lasers XIV

View full text Add to dashboard Cite

The infrared emission from 980-nm single-mode high power diode lasers is analyzed in the wavelength range from 0.8 to 7.0 µm. A pronounced short-wavelength infrared (SWIR) emission band with a maximum at 1.3 µm is found to originate from defect states located within the waveguide of the devices. The SWIR intensity is verified to represent a measure of the non-equilibrium carrier concentration in the waveguide, allowing for non-destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid-wavelength infrared thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for in situ analysis of the damage patterns. Moreover, spatial resolved SWIR measurements are a promising tool for device inspecting even in low-power operation regimes.

show abstract

Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers

Cited by 19 publications

References 7 publications

Internal degradation of 980nm emitting single-spatial-mode lasers during ultrahigh power operation

Internal degradation of 980nm emitting single-spatial-mode lasers during ultrahigh power operation

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Short-wavelength infrared defect emission as probe for degradation effects in diode lasers

Contact Info

Product

Resources

About