Very high performance non-volatile memory on flexible plastic substrate

Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

“…Now we will compare the flexible memory performance of Ag-decorated CNP device with the recent studies on flexible nonvolatile memories as functions of the ON/OFF resistance ratio and the curvature radius in Figure 6 . The data contains several types of nonvolatile memory devices including flash memory 13 14 15 16 , FeRAM 18 19 and resistive memory 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 and several types of material including graphene, other organic materials and oxides. Our Ag-decorated CNP device shows superior flexible memory performance to any existing flexible nonvolatile memories in terms of the flexibility and the ON/OFF resistance ratio.…”

“…Previously, several types of flexible nonvolatile memory such as flexible flash memory1314151617, flexible ferroelectric memory1819 and flexible resistive memory20212223242526272829303132333435363738 have been demonstrated. In these previous flexible nonvolatile memories, the smallest radius into which the memory devices can be bent has been limited to several millimeters due to the strain-induced degradation of memory properties40.…”

“…Nonvolatile memory, which is an essential component for portable and self-standing electronics, is an important flexible circuit component 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 . Previously, several types of flexible nonvolatile memory such as flexible flash memory 13 14 15 16 17 , flexible ferroelectric memory 18 19 and flexible resistive memory 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 have been demonstrated. In these previous flexible nonvolatile memories, the smallest radius into which the memory devices can be bent has been limited to several millimeters due to the strain-induced degradation of memory properties 40 .…”

Improved high‐temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

“…Since the technology node scales down with the continuous trend of nonvolatile memory (NVM) toward high density, fast speed and low power consumption, the conventional flash memory 1–3 has approached technical and physical limitations. Recently, non‐charge based resistive random access memory (RRAM) 4–21 has attracted much attention as one of the most promising candidates in the next‐generation NVM application, due to its simple structure, low cost, high switching speed, low power consumption and high compatibility with the complementary metal–oxide–semi‐conductor (CMOS) processes. However, due to the barrier height lowering at high temperature, the apparent degradation on sneak current and current distribution are major challenges, especially for the scaled one‐diode–one‐resistor (1D1R) RRAM crossbar arrays.…”

Overview of emerging semiconductor non-volatile memories

“…After that, a lot of materials such as NiO [47,48,49,50] [75,76,77], and GeO [78,79,80] are proposed as other candidates. Most of reports use Pt as an electrode but papers using other metals like Ru, Ni, and IrO 2 are increasing.…”