2009
DOI: 10.1143/apex.2.111501
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Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives

Abstract: Field-effect mobility as high as 5 cm2/(V s) is achieved in solution-processed organic thin-film transistors with the development of a method for growing highly-oriented crystalline films of [1]benzothieno[3,2-b]benzothiophene derivatives. A droplet of the solution is sustained at an edge of a structure on an inclined substrate, so that the crystalline domain grows in the direction of inclination. The oriented growth realizes excellent molecular ordering that manifests itself in micrometer-scale molecular terr… Show more

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Cited by 262 publications
(207 citation statements)
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“…To promote the growth of organic films with a well-defined crystalline orientation, various approaches have been suggested in the literature, including a liquid-sustaining blade held or moved along the Si/SiO 2 wafer 16 , or drop casting a semiconductor solution on an inclined Si/SiO 2 wafer 17 . These methods provide a driving force for oriented film growth.…”
Section: Resultsmentioning
confidence: 99%
“…To promote the growth of organic films with a well-defined crystalline orientation, various approaches have been suggested in the literature, including a liquid-sustaining blade held or moved along the Si/SiO 2 wafer 16 , or drop casting a semiconductor solution on an inclined Si/SiO 2 wafer 17 . These methods provide a driving force for oriented film growth.…”
Section: Resultsmentioning
confidence: 99%
“…Their solutionprocessed films showed average mobility values as high as 0.1 cm 2 V À 1 s À 1 for samples prepared by simple spin-coating 13 , 0.9 cm 2 V À 1 s À 1 when using a method based on the modified capillary force lithography 14 and 25 cm 2 V À 1 s À 1 when a novel off-centre spin-coating method is employed 15 . On the other hand, inkjet printing single crystals yielded TFTs for which average mobilities of 16.4 cm 2 V À 1 s À 1 were reported 16 , whereas 5 cm 2 V À 1 s À 1 was measured on devices prepared by drop casting on inclined substrates 17 . These values testify that BTBT is among the best performing p-type materials for TFTs, thus competing with their amorphous silicon-based counterparts.…”
mentioning
confidence: 99%
“…To address the above challenges, various groups have developed methods to pattern OSCs (3,9,(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24), such as templating OSCs (14,(19)(20)(21), inkjet printing (9,18), gravure printing, and other roll-to-roll coating methods (25)(26)(27). In addition, the use of solvent wetting/dewetting surface treatments has been widely used in conjunction with the patterning methods described above (10, 11, 13, 15-17, 22, 28, 29).…”
mentioning
confidence: 99%