Vertically standing Ge nanowires on GaAs(110) substrates

Abstract

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380 °C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the [Formula: see text] direction. Using this unique property, vertical [Formula: see text] Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the [Formula: see text] directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.

Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

“…However, it can be seen that some NWs were grown perpendicular to substrate surface. This is possibly due to As dissociation during growth process as reported by Song [12]. Fig.…”

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

“…The VLS method has allowed the development of a wide variety of NW materials; group IV (Si [340], [345], Ge [340], [346], [347]), II-VI (ZnO, CdS) [348], [349], III-V (GaN, GaAs, InP) [348], [350]- [353], and alloy compound semiconductors [354], [355]. Particularly for Si NW growth, various kinds of metal catalysts, such as Au [59], [131], [335], [339], [356]- [358], Ag [57], [339], [359], [360], Al [360]- [362], Cu [339], [358], [363], [364], Fe [365]- [367], Ga [58], [360], [361], In [360], [368], [369], Ni [59], [339], [359], [360], [370], Pd [59], [339], [358], [360], [371], Pt …”

Germanium Nanowire Synthesis from Fluorothiolate-Capped Gold Nanoparticles in Supercritical Carbon Dioxide

“…Patterning of substrates with Au nanoparticles by lithographic techniques, or the use of colloidal nanoparticles, have proved an effective route for the controlled growth of Ge nanowires in the diameter range between 20-50 nm [10][11][12] . Colloid-mediated growth has been applied to the vapour-liquid-solid (VLS), solution-liquid-solid (SLS) and supercritical fluid-liquid-solid (SFLS) synthesis of Ge nanowires [13][14][15] .…”