Germanium Nanowire Synthesis from Fluorothiolate-Capped Gold Nanoparticles in Supercritical Carbon Dioxide

Abstract

Access to the full text of the published version may require a subscription. Differences in the ligand conformations on the surface of the Au nanoparticles and phase separation of the fluorocarbon/CO2 and hydrocarbon/toluene systems, gave rise to greater steric stabilisation of 2 the fluorous-capped Au nanoparticles in CO2, resulting in small diameter nanowires with a relatively narrow size distribution. Electrical analysis of the nanowires showed them to be p-type (hole) Rightssemiconductors.

In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

“…22. Our earlier studies 12,22,23 indicated that the as-grown NWs were p-type doped with carrier concentrations ranging from 3 Â 10 17 cm À3 up to 10 19 cm À3 . This behaviour is characteristic for all nonintentionally doped synthetically derived Ge NWs.…”

“…1(a)) were synthesized via a vapour-liquid-solid approach as described in Ref. 22. Our earlier studies 12,22,23 indicated that the as-grown NWs were p-type doped with carrier concentrations ranging from 3 Â 10 17 cm À3 up to 10 19 cm À3 .…”

Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge Nanowires

“…[10][11] A popular route for growing high aspect ratio onedimensional (1D) nanostructures is to use a metallic growth promoter in a liquid state, typically gold, as a catalytic seed via a vapor-liquid-solid (VLS) mechanism. [12][13][14][15] There are three steps which contribute to nanowire growth kinetics via a VLS mechanism: (i) the incorporation of the growth species from the vapor phase to the liquid growth promoter, (ii) the diffusion of the growth species inside the liquid melt and (iii) crystallization of the growth material at the liquid-solid interface. Steps (i) and (iii) are believed to be key steps in determining the nanowire growth rate.…”

Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires

“…Details of SFLS technique can be found in earlier works. 17,18 Two types of Ge NWs grown at different conditions 19 were used (referred to as "type A" 17 and "type B" (Ref.…”