Vertically aligned ultrathin MoSe2 nanoflakes grown on carbon cloth and its field emission behaviour

Dusane, Pravin R.; Thombare, Balu R.; Bankar, Prashant K.; Lole, Gaurav; Gavhane, Dnyaneshwar S.; Khedkar, Chaitali V.; Nagrare, Bhagyashree; Salunkhe, A.B.; Kolhe, Pankaj; Choudhary, R. J.; Phase, D. M.; More, Mahendra A.; Patil, S. F.

doi:10.1016/j.materresbull.2019.04.015

Cited by 20 publications

(7 citation statements)

References 36 publications

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“…Among the numerous inorganic 2D nanostructures, in particular the TMDs, MoS 2 has been well characterized for its FE properties. 30,33 34 In addition, enhanced FE performance from WS 2 nanotubes emitter was reported by Viskadouros et al 35 The authors have observed remarkable emission current stability over more than 18 h of continuous operation. Recently, studies on WS 2 nano-petals and nanobristles supported on carbon nanotubes for FE applications have been reported.…”

Section: ■ Introductionmentioning

confidence: 86%

“…Very recently, Giubileo et al have studied the FE properties of hydrothermally synthesized MoS 2 nanoflowers on copper foil . FE characteristics of geometrically modulated monolayers of MoS 2 and MoSe 2 synthesized by chemical vapor deposition have been determined by Yang et al Recently, Dusane et al have studied FE properties of vertically aligned ultrathin MoSe 2 nanoflakes grown on carbon cloth . In addition, enhanced FE performance from WS 2 nanotubes emitter was reported by Viskadouros et al The authors have observed remarkable emission current stability over more than 18 h of continuous operation.…”

Section: Introductionmentioning

confidence: 99%

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In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

Dhongade

Mutadak

Deore

et al. 2020

ACS Appl. Nano Mater.

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In the present study, we report a simple method to prepare indium(III) selenide (In2Se3) nanocubes synthesized by laser ablation in aqueous medium. The morphological characterization carried out using field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) reveal that the nanocubes have an average size of 70 nm. X-ray diffraction and Raman analysis clearly imply formation of pure and crystalline In2Se3 phases only, without any impurity phases, despite laser ablation being carried out in aqueous medium. In addition, the field emission and charge carrier behavior of In2Se3 nanocubes have been investigated. The laser-ablated sample shows a cubical morphology having a 70 nm average particle size. The ultrafast transient absorption spectroscopy (UTAS) suggests the slow decay behavior of charge carriers and an increase in the trap state levels after laser ablation, in contrast to the untreated bulk sample. Surprisingly, the In2Se3 nanocubes on a carbon tape emitter exhibits superior FE properties characterized by lower values of turn-on and threshold fields as compared to In2Se3 nanowire emitters and the ability to deliver very large current density ∼2656 μA/cm2 by applying a field of 9.7 V/μm. Furthermore, the In2Se3 nanocube emitter showed very good emission stability at the pre-set value 10 μA over a duration of 5 h. The superior FE characteristics of the In2Se3 nanocube emitter is attributed to unique morphology characterized by nanometric cubes and improved electrical properties, as revealed by UTAS analysis. The observed results imply the potential of In2Se3 nanocube emitters for practical applications in vacuum nano-microelectronic devices.

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Section: ■ Introductionmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

Dhongade

Mutadak

Deore

et al. 2020

ACS Appl. Nano Mater.

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“…grown vertically aligned ultrathin MoSe 2 nanoflakes on carbon cloth (CC) with sodium molybdate [Na 2 MoO 4 .2H 2 O] and sodium selenide [Na 2 SeO 3 ] as starting precursors. [ 121 ] Initially, precursors were dissolved in diethylenetriamine (DETA) and deionized water in a 2:1 (V/V ratio) proportion and stirred solution transferred to Teflon linear, which already contained cleaned carbon cloth. Then Teflon was heated in a furnace at 200 °C for 48 h and the final material was washed several times with ethanol and deionized water followed by vacuum drying.…”

Section: Preparation Methods Of Vertically Aligned 2d Materialsmentioning

confidence: 99%

“…Vertically, aligned MoSe 2 nanoflakes on carbon cloths showed comparable values of turn‐on and threshold fields to those exhibited by nanostructures and nanocomposites of other TMDs. [ 121 ] The vertical MoSe 2 emitter exhibited high emission current density of 5.372 mA cm ‐2 at an applied electric field of 8 V µm ‐1 with no degradation in emission current over a duration of 10 h. Vertically aligned SnS 2 nanosheet arrays with 1–5 atomic layers grown directly on Sn foil showed the turn‐on field of 6.9 V µm ‐1 . [ 22 ] Turn on‐field value for GaS nanohorns arrays is reported to be 4.2 V µm ‐1 with a current density of 0.1 mm cm ‐2 and stability for more than 4 h. [ 168 ] Similarly, it is reported that the availability of a large number of layer edges in the BN nanosheet arrays contributed significantly to enhanced field emission performance.…”

Section: Applications Of Vertically Aligned 2d Materialsmentioning

confidence: 99%

Vertically Aligned Graphene‐Analogous Low‐Dimensional Materials: A Review on Emerging Trends, Recent Developments, and Future Perspectives

Shinde

Samal

Rout

2022

Adv Materials Inter

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2D materials currently includes graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), 2D carbides/nitrides (MXenes), monoelemental Xenes, and perovskites. [2][3][4][5][6] These families opened new horizons for advanced applications since they have unusual electronic, mechanical, and optical properties. Though these materials have layered structures, yet their diversity in properties highly depends on their composition and phases.Graphene owns interesting properties like large surface area, dangling bond-free surface, high carrier mobility, high optical absorption coefficient, high Young's modulus, and high thermal conductivity. [7] However, the zero bandgap and semimetal properties of graphene limit its application in switching devices. h-BN attracted magnetized attention due to its superb chemical stability and intrinsic insulation. [8] As one of the most studied families, TMDs offer diversity in compositions, and phases, which exhibit many technologically interesting properties. [9][10][11] Among TMDs, MoS 2 is the most examined and well-explored material due to its robustness and semiconducting properties. TMDs offer a unique combination of atomic-scale thickness, strong spin-orbit coupling, sizeable bandgap, and favorable optoelectronic properties for numerous applications. [12] MXenes represent a large family of 2D materials whose several structures were predicted theoretically, while several of them have been realized experimentally also such as Ti

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“…A slight decrease in the turn on field to value enhancement which is characteristic of FE cathode. 39,40…”

Section: Crystallite Size Dmentioning

confidence: 99%

Investigation of 500 keV Si ion induced surface structuring of Ni and Ti for enhancement of field emission properties

Ahmad

Bashir

Akram

et al. 2022

Surface & Interface Analysis

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The present paper reports the investigation of surface morphology, elemental composition, phase changes and field emission properties of Si ion irradiated nickel (Ni) and titanium (Ti). The Ni and Ti targets have been irradiated with 500 keV Si ions generated by Pelletron accelerator at various fluences ranging from 6.9 × 1013 to 77.1 × 1013 ions/cm2. Stopping range of ions in matter analysis revealed higher values of electronic stopping and sputtering yield for Ni as compared with Ti. For both irradiated metals, electronic energy loss dominant over the nuclear stopping. The growth of induced surface structures have been analysed by using field emission scanning electron microscopy (FESEM) analysis. In case of Ni, as the ion fluence increases from 6.9 × 1013 to 65.8 × 1013 ions/cm2, the formation of spherical particulates, agglomers and sputtering is observed. Although in the case of Ti, with the increase of Si ion fluence from 11.6 × 1013 to 77.1 × 1013 ions/cm2, the formation of irregular‐shaped particulates along with crater and sputtered channels is observed. X‐ray diffraction (XRD) analysis shows that no new phase is identified. However, a significant increase in peak intensity is observed with increasing ion fluence. The variation in crystallite size and dislocation line density is also observed as a function of Si ion fluence. Fourier transform infrared spectroscopy analysis shows that no bands are formed after the Si ion irradiation. Field emission properties of ion‐structured Ni and Ti are well correlated with the growth of surface structures observed by SEM and dislocation line density evaluated by XRD analysis.

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Vertically aligned ultrathin MoSe2 nanoflakes grown on carbon cloth and its field emission behaviour

Cited by 20 publications

References 36 publications

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

Vertically Aligned Graphene‐Analogous Low‐Dimensional Materials: A Review on Emerging Trends, Recent Developments, and Future Perspectives

Investigation of 500 keV Si ion induced surface structuring of Ni and Ti for enhancement of field emission properties

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Vertically aligned ultrathin MoSe2 nanoflakes grown on carbon cloth and its field emission behaviour

Cited by 20 publications

References 36 publications

In2Se3 Nanocubes as High Current Density Cold Cathode Materials

In2Se3 Nanocubes as High Current Density Cold Cathode Materials

Vertically Aligned Graphene‐Analogous Low‐Dimensional Materials: A Review on Emerging Trends, Recent Developments, and Future Perspectives

Investigation of 500 keV Si ion induced surface structuring of Ni and Ti for enhancement of field emission properties

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Product

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In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials