Vertically aligned InGaN nanowire arrays on pyramid textured Si (1 0 0): A 3D arrayed light trapping structure for photoelectrocatalytic water splitting

Engineering Nanostructure–Interface of Photoanode Materials Toward Photoelectrochemical Water Oxidation

“…Therefore, the carrier transport of the planar-structured photoanode is quite poor, leading to unsatisfied PEC performance (Figure 3a). [77,78] In contrast, a series of photoanodes with complex nanostructure have been designed, including nanorod/ nanowire/nanopillar/nanopyramid array, [53,66,[79][80][81][82] nanosheet array, [83][84][85][86] nanotube array, [87] nanobowl array, [88] inverse opal structure, [89] network structure, [90] and hollow structure and porous structure photoanode. [91,92] By designing photoelectrode with these complex nanostructures (Figure 3b,c), the carrier transport and interfacial injection processes can be efficiently enhanced, contributing to obviously enhanced water oxidation performances.…”

Strategies for improving photoelectrochemical water splitting performance of Si‐based electrodes

“…During the past decade, Si nanostructures have played an important role in optimizing Si photoelectrodes to boost the conversion efficiency of solar energy to hydrogen, especially nanowires (NWs) 56,61‐67 …”

“…During the past decade, Si nanostructures have played an important role in optimizing Si photoelectrodes to boost the conversion efficiency of solar energy to hydrogen, especially nanowires (NWs). 56,[61][62][63][64][65][66][67] These nanoarrays have high aspect ratios, when incident light travels into these nanoarrays, the multiple reflections and scattering happen within the intervals. It follows that the transmitting paths of light become longer in the Si absorber and further increase the capability for capturing photons.…”

Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate

“…In decades, III-nitride semiconductor materials have found ample scope for their superior physical properties, including large-scale tunable bandgap, high electron velocity, large thermal conductivity, outstanding optoelectronic performance, and so forth, in light-emitting diode (LED) lighting and display applications , as well as high-frequency and high-power device field. , In addition to the continuous improvement in the traditional application fields, III-nitride materials have also been identified as promising candidates for novel applications in terms of not only photoelectrochemistry but also piezoelectronics, − namely, nanogenerators to be specific, which has been first established with ZnO nanowires (NWs) for the generation of electrical energy from mechanical deformation. − III-nitride NWs as one-dimensional wurtzite crystal nanostructures with intrinsic noncentral symmetry because of their large surface-to-volume ratio, high flexibility, and mechanical advantages exhibit essential prerequisites including high sensitivity and piezoelectric response to the applied force as a promising candidate to fabricate efficient piezoelectric nanogenerators (PNGs). , Intensive efforts have been devoted to boost the piezoelectric related performance of III-nitride NWs such as efficient coupling of the lateral bending mode in the GaN NWs obliquely aligned on the textured Si substrate, composition and doping profile engineering, monolithic integration with luminous LED modules, adoption of the InGaN/GaN multi-quantum well structure with the energy band modulated by piezotronic effects acting as a high sensitivity strain sensor, and so forth. Given a more delicate design, an asymmetry piezoelectric output was observed with an inclined InN NWs array attributed to the variation of the tangential force between the tip and the NWs. , Few studies have been carried out to further enhance the piezoelectric response anisotropy and even demonstrate it with PNG devices.…”

“…In decades, III-nitride semiconductor materials have found ample scope for their superior physical properties, including large-scale tunable bandgap, high electron velocity, large thermal conductivity, outstanding optoelectronic performance, and so forth, in light-emitting diode (LED) lighting and display applications 1,2 as well as high-frequency and high-power device field. 3,4 In addition to the continuous improvement in the traditional application fields, III-nitride materials have also been identified as promising candidates for novel applications in terms of not only photoelectrochemistry 5 but also piezoelectronics, 6−9 namely, nanogenerators to be specific, which has been first established with ZnO nanowires (NWs) for the generation of electrical energy from mechanical deformation. 10−12 III-nitride NWs as one-dimensional wurtzite crystal nanostructures with intrinsic noncentral symmetry because of their large surface-to-volume ratio, high flexibility, and mechanical advantages exhibit essential prerequisites including high sensitivity and piezoelectric response to the applied force as a promising candidate to fabricate efficient piezoelectric nanogenerators (PNGs).…”