Vertical ZnO nanowires/graphene hybrids for transparent and flexible field emission

Hwang, Jin Ok; Lee, Jun Young; Kim, Ju Young; Han, Tae Hee; Kim, Bong Hoon; Park, Moonkyu; No, Kwangsoo; Kim, Sang Ouk

doi:10.1039/c0jm01495h

Cited by 231 publications

(156 citation statements)

References 36 publications

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“…The turn-on field of SiC nanowire emitters, which was conventionally defined as the E obtained with the J of 10 µA/cm 2 , 8 23 Table I shows that the test data in our experiments are very impressive. [27][28][29][30] The field emission properties of SiC nanowires synthesized in this work are very excellent, and the fabrication process of SiC nanowires in this paper is very simple, suitable for any substrates including the flexible one. The excellent experimental results are mainly due to the low work function and the high aspect ratio of the axially grown nanowires.…”

Section: Resultsmentioning

confidence: 90%

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Cui

Chen

et al. 2017

AIP Advances

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In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ∼110 nm and length of∼30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (∼0.95 V/μm) and threshold field (∼3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

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Section: Resultsmentioning

confidence: 90%

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Cui

Chen

et al. 2017

AIP Advances

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“…Compared with their concave and flat counterparts, a slight decrease of E to and E thr as well as the enhancement of FE stability of SiC emitters in convex geometry could be attributed to a weaker screening effect induced by neighboring emitter sites. 7,37 No obvious change in current fluctuations was found, suggesting that the stresses of the substrate caused by different bending states do not have any significant effect on emission stability. These experimental results confirm that the present n-type SiC nanoneedles could be an excellent candidate for robust field emitters with high flexibility, low E to and E thr and high stability.…”

Section: N-dopedmentioning

confidence: 93%

“…These flexible emitters should maintain their original or even better FE properties as well as excellent electrical and mechanical performances after bending, compressing, twisting and stretching. 7,8 To date, a variety of cathodes have been developed based on flexible substrates such as polymers, 9 graphene 7 and carbon fabrics. 10 However, material-and fabrication-related obstacles to the realization of high-performance flexible emitters remain.…”

Section: Introductionmentioning

confidence: 99%

Highly flexible and robust N-doped SiC nanoneedle field emitters

et al. 2015

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Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm − 1 , 1.55 V μm − 1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. NPG Asia Materials (2015) 7, e157; doi:10.1038/am.2014.126; published online 23 January 2015 INTRODUCTIONFlexible electronic devices have attracted extensive attention in recent decades because of their numerous promising applications, such as flexible energy-storage devices, wearable energy-harvesting systems and stretchable electronics. 1-4 Among the emerging technologies, there is considerable interest in flexible field emission (FE) emitters due to their unique lightweight, conformable and flexible nature, which give them the significant advantage of being utilized in roll-up flexible FE displays, 3 e-papers 5 and high-performance X-ray tubes. 6 To enable such next-generation flexible devices, flexible cathodes must be used as the fundamental starting component to replace conventional emitters grown on rigid substrates. These flexible emitters should maintain their original or even better FE properties as well as excellent electrical and mechanical performances after bending, compressing, twisting and stretching. 7,8 To date, a variety of cathodes have been developed based on flexible substrates such as polymers, 9 graphene 7 and carbon fabrics. 10 However, material-and fabrication-related obstacles to the realization of high-performance flexible emitters remain.Silicon carbide (SiC) is an excellent material candidate for constructing advanced FE emitters. SiC is a third-generation wide band-gap semiconductor with excellent physical properties such as high strength and stiffness, high-temperature stability, corrosion resistance and high thermal conductivity. [11][12][13] To date, several studies have explored the FE properties of nanostructured SiC emitters

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“…[19][20][21] ZnO-GO composites have been reported for applications like corrosion protection, photocatalysis, batteries, field emission prosperities and for incorporation in polymer solar cells. [22][23][24] Both graphene and reduced graphene oxide have been used as nanocomposite with TiO 2 in perovskite solar cells. 25,26 Incorporation of graphene is reported to have reduced the series resistance component of the solar cells resulting in increase in their efficiency.…”

Section: Introductionmentioning

confidence: 99%

Low resistivity ZnO-GO electron transport layer based CH3NH3PbI3 solar cells

et al. 2016

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Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 oC, providing indirect evidence of the performance of solar cells at elevated temperatures.

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Vertical ZnO nanowires/graphene hybrids for transparent and flexible field emission

Cited by 231 publications

References 36 publications

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Highly flexible and robust N-doped SiC nanoneedle field emitters

Low resistivity ZnO-GO electron transport layer based CH3NH3PbI3 solar cells

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