Vertical twinning of the Dirac cone at the interface between topological insulators and semiconductors

Seixas, Leandro; West, Damien; Fazzio, A.; Zhang, S. B.

doi:10.1038/ncomms8630

Cited by 30 publications

(32 citation statements)

References 30 publications

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“…The localization of the TSS can undergo a shift from the TI to the first layers of the CI, it may stay put at the interface, or it can move back inside the TI 13 . In other words, if a TSS migration arises at the interface, it can be the result of a "topologization" of the CI or a "trivialization" of the TI 9, [14][15][16][17][18][19] .…”

mentioning

confidence: 99%

Topologization of β-antimonene on Bi2Se3 via proximity effects

Holtgrewe

Mahatha

Sheverdyaeva

et al. 2020

Sci Rep

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Topological surface states usually emerge at the boundary between a topological and a conventional insulator. Their precise physical character and spatial localization depend on the complex interplay between the chemical, structural and electronic properties of the two insulators in contact. Using a lattice-matched heterointerface of single and double bilayers of β-antimonene and bismuth selenide, we perform a comprehensive experimental and theoretical study of the chiral surface states by means of microscopy and spectroscopic measurements complemented by first-principles calculations. We demonstrate that, although β-antimonene is a trivial insulator in its free-standing form, it inherits the unique symmetry-protected spin texture from the substrate via a proximity effect that induces outward migration of the topological state. This "topologization" of β-antimonene is found to be driven by the hybridization of the bands from either side of the interface.

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confidence: 99%

Topologization of β-antimonene on Bi2Se3 via proximity effects

Holtgrewe

Mahatha

Sheverdyaeva

et al. 2020

Sci Rep

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“…This behavior is similar to the recent studies which report that in semiconductor/TI heterostructures, semiconductor states can acquire a nontrivial spin texture as a result of their interaction with the TI interface states. 88,89 (TlBiSe 2 ) 1−x (TlBiTe 2 ) x boundaries. This system contains two 3D TI materials.…”

Section: Resultsmentioning

confidence: 99%

“…These types of bands are reported for TI heterostructures and are described as mixed-character bands. 87,89 Thusly, instead of two metallic channels, only one metallic channel arises, which includes the entire TlBiSe 2 region. The upper and lower branches of the Dirac-like points have opposite spin polarization (Figure 3(c-e), insets), indicating that they are topologically protected.…”

Section: Resultsmentioning

confidence: 99%

Spinodal Superlattices of Topological Insulators

et al. 2018

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Spinodal decomposition is proposed for stabilizing self-assembled interfaces between topological insulators (TIs) by combining layers of iso-structural and iso-valent TlBiX2 (X=S, Se, Te) materials. The composition range for gapless states is addressed concurrently to the study of thermodynamically driven boundaries.By tailoring composition, the TlBiS2-TlBiTe2 system might produce both spinodal superlattices and two dimensional eutectic microstructures, either concurrently or separately. The dimensions and topological nature of the metallic channels are determined by following the spatial distribution of the charge density and the spin-texture. The results validate the proof of concept for obtaining spontaneously forming two-dimensional TI-conducting channels embedded into three-dimensional insulating environments without any vacuum interfaces. Since spinodal decomposition is a controllable kinetic phenomenon, its leverage could become the long-sought enabler for effective TI technological deployment.arXiv:1803.06289v1 [cond-mat.mtrl-sci]

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“…While initial research efforts had mostly been devoted to the vacuum-facing TI surfaces [29][30][31][32][33][34][35] , increasing experimental [36][37][38][39] and theoretical attention [40][41][42][43][44] have recently been paid to the more realistic situation, the interfaces between TIs and normal insulators (NIs). It is motivated by the fact that interfaces are protected from the possible ambient contamination 45,46 and moreover these types of heterojunctions can be integrated into existing semiconductor technology, hence, they are more advantageous for utilizing the topological conducting boundary states.…”

Section: Introductionmentioning

confidence: 99%

Lattice-matched heterojunctions between topological and normal insulators: A first-principles study

Lee

Yazyev

2017

Phys. Rev. B

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Gapless boundary modes at the interface between topologically distinct regions are one of the most salient manifestations of topology in physics. Metallic boundary states of time-reversal-invariant topological insulators (TIs), a realization of topological order in condensed matter, have been of much interest not only due to such a fundamental nature, but also due to their practical significance. These boundary states are immune to backscattering and localization owing to their topological origin, thereby opening up the possibility to tailor them for potential uses in spintronics and quantum computing. The heterojunction between a TI and a normal insulator (NI) is a representative playground for exploring such a topologically protected metallic boundary state and expected to constitute a building block for future electronic and spintronic solid-state devices based on TIs. Here, we report a first-principles study of two experimentally realized lattice-matched heterojunctions between TIs and NIs, Bi2Se3(0001)/InP(111) and Bi2Te3(0001)/BaF2 (111). We evaluate the band offsets at these interfaces from many-body perturbation theory within the GW approximation as well as density-functional theory. Furthermore, we investigate the topological interface states, demonstrating that at these lattice-matched heterointerfaces they are strictly localized and their helical spin textures are as well preserved as those at the vacuum-facing surfaces. These results taken together may help in designing devices relying on spin-helical metallic boundary states of TIs.

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Vertical twinning of the Dirac cone at the interface between topological insulators and semiconductors

Cited by 30 publications

References 30 publications

Topologization of β-antimonene on Bi2Se3 via proximity effects

Topologization of β-antimonene on Bi2Se3 via proximity effects

Spinodal Superlattices of Topological Insulators

Lattice-matched heterojunctions between topological and normal insulators: A first-principles study

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